Novel Interface Properties of Au Overlayer on Top of C_(60) Polycrystalline Film

Jian-Liang Liao; Kuan-Cheng Chiu

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Novel Interface Properties of Au Overlayer on Top of C_(60) Polycrystalline Film

机译：C_（60）多晶膜顶部的Au覆盖层的新界面性质

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From a temperature dependence of the dark electrical conductivity of Au overlayer σ_m(T) measured along the interface direction on top of a C_(60) polycrystalline film, a dramatic change in σ_m is observed at T ≈ 255 K; σ_m(T) increases with increasing temperature. As deduced from σ_M versus 1/T, an activation energy of 200 ± 30 meV for T < 255 K is much larger than that of 59 ± 2 meV for T > 255 K. These novel phenomena are explained by structural-electronic interaction on the Au/C_(60) interface with a change in the properties of the induced surface states due to the rotational order/disorder phase transition.

机译：从沿着C_（60）多晶膜顶部的界面方向测量的Au覆盖层暗电导率σ_m（T）的温度依赖性，可以观察到在T≈255 K时σ_m发生了显着变化。 σ_m（T）随着温度的升高而增加。根据σ_M与1 / T的关系推导，T <255 K时200±30 meV的活化能比T> 255 K时59±2 meV的活化能大得多。这些新现象可以通过结构电子相互作用来解释。 Au / C_（60）与由于旋转有序/无序相变而引起的感应表面状态的特性变化有关。

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来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2006年第7期|p.5689-5691|共3页
作者
Jian-Liang Liao; Kuan-Cheng Chiu;
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作者单位

Department of Physics and Center of Nano-Technology, Chung-Yuan Christian University, Chung-Li, Taiwan 32023, R.O.C.;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
metal semiconductor contacts; C_(60) polycrystalline film; interface properties; structural-electronic interaction;

机译：金属半导体接触;C_（60）多晶膜;界面性质;结构-电子相互作用;

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Novel Interface Properties of Au Overlayer on Top of C_(60) Polycrystalline Film

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