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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Ablation and Amorphization of Crystalline Si by Femtosecond and Picosecond Laser Irradiation
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Ablation and Amorphization of Crystalline Si by Femtosecond and Picosecond Laser Irradiation

机译：飞秒和皮秒激光辐照结晶硅的烧蚀和非晶化

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摘要

The ablation and amorphization of crystalline Si by femtosecond and picosecond laser irradiations are reported in this paper. Laser pulse width was varied in the range of 100 fs-200 ps. We obtained the dependences of ablation rate and fluence for amorphization on laser pulse width. At a lower fluence than a single-shot ablation threshold, femtosecond laser irradiation induced the amorphization of crystalline Si. We confirmed the thickness of an amorphous Si layer by transmission electron microscopy. The thickness of an amorphized layer, which was about 50 nm and almost uniform, did not depend on the number of irradiated laser pulses and fluence. The fluence range for amorphization decreased with increasing laser pulse width.
机译：本文报道了飞秒和皮秒激光辐射对晶体硅的烧蚀和非晶化。激光脉冲宽度在100 fs-200 ps的范围内变化。我们获得了消融速率和能量密度对激光脉冲宽度的影响。飞秒激光辐照的通量比单次消融阈值低，会诱导晶体Si非晶化。我们通过透射电子显微镜确认了非晶硅层的厚度。非晶化层的厚度大约为50 nm，几乎是均匀的，并不取决于所照射的激光脉冲的数量和能量密度。随着激光脉冲宽度的增加，非晶化的注量范围减小。

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