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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN
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Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN

机译：横向外延生长的a平面GaN上制备的非极性发光二极管的结构和电致发光特性

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摘要

We report on the structural and electroluminescence characteristics of blue and cyan a-plane InGaN/GaN light-emitting diodes (LEDs). Cross-sectional transmission emission microscopy revealed the generation of occasional "asymmetric Ⅴ-defects" in the active region. The blue and cyan LEDs exhibited rectifying behavior with forward voltages of 2.4 and 3.5 V at 20 mA, respectively and series resistances of 7 and 8 Ω, respectively. On-wafer dc output powers as high as 1.8 and 1.0 mW were measured at a drive current of 300 mA for the blue and the cyan LEDs, respectively. Electroluminescence measurement revealed an initial blue shift in the emission wavelength with the increase in the drive current. We speculate that the emission wavelength shift is due to the band-filling effect as a result of localization in the inclined non-{1120} oriented facets, which are polar in nature.
机译：我们报告了蓝色和青色a面InGaN / GaN发光二极管（LED）的结构和电致发光特性。横截面透射发射显微镜显示在活性区域中偶发的“不对称Ⅴ型缺陷”的产生。蓝色和青色LED在20 mA时正向电压分别为2.4和3.5 V，串联电阻分别为7和8Ω，表现出整流性能。蓝色和青色LED在300 mA的驱动电流下分别测量了高达1.8和1.0 mW的晶圆上直流输出功率。电致发光测量表明，随着驱动电流的增加，发射波长出现了初始蓝移。我们推测，发射波长偏移是由于带宽填充效应而导致的，该带宽填充效应是定位在倾斜的非{1120}定向小平面上的结果，该小平面本质上是极性的。

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