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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Control of Compositional Profile and Crystallinity of CuIn_(1-x)Al_xS_2 Thin Films
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Control of Compositional Profile and Crystallinity of CuIn_(1-x)Al_xS_2 Thin Films

机译：CuIn_（1-x）Al_xS_2薄膜的成分分布和结晶度的控制

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摘要

A CuIn_(1-x)Al_xS_2 thin film was prepared on a borosilicate glass substrate by sulfurizing a vacuum-evaporated metallic stack of Cu, In and Al precursor layers. Using a Cu-rich precursor, the alloy film with both good crystallinity and homogeneity was obtained. The lattice constants a and c of the film varied almost linearly with Al composition. The optical band gap of the film increased nonlinearly from 1.5 to 3.5 eV with Al composition. A high sulfurization temperature of up to 570℃ was also found effective in enhancing homogeneity. The use of a Cu-poor precursor gave rise to the film in which Al composition increased stepwise when scanned from the top surface to the bottom.
机译：通过硫化铜，铟和铝前驱物层的真空蒸发金属叠层，在硼硅酸盐玻璃基板上制备CuIn_（1-x）Al_xS_2薄膜。使用富含铜的前体，获得了具有良好结晶性和均质性的合金膜。膜的晶格常数a和c几乎随Al组成线性变化。铝组成的薄膜的光学带隙从1.5 eV非线性增加到3.5 eV。还发现高达570℃的高硫化温度可有效提高均质性。贫铜的前体的使用产生了这样的膜，其中当从顶表面到底部扫描时，Al组成逐步增加。

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