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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Annihilation of Acceptor-Hydrogen Pairs in Si Crystals Due to Electron Irradiation
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Annihilation of Acceptor-Hydrogen Pairs in Si Crystals Due to Electron Irradiation

机译：电子辐照导致硅晶体中受体氢对的灭

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摘要

We observed the annihilation of boron-hydrogen (BH) pairs and gallium-hydrogen (GaH) pairs during electron irradiation of Si crystals. BH and GaH pairs were generated by annealing of specimens co-doped with B or Ga and H. They were then irradiated with 3 MV electrons at room temperature. Intensities of optical absorption peaks due to BH and GaH pairs were observed at about 7 K. BH pairs and GaH pairs were found to decrease in one stage and two stages, respectively, with the increase of irradiation dose. These decreases were interpreted to be due to interactions between those pairs and self-interstitials.
机译：我们观察到在Si晶体电子辐照过程中硼氢（BH）对和镓氢（GaH）对的an灭。通过对掺有B或Ga和H的样品进行退火来生成BH和GaH对。然后在室温下用3 MV电子辐照它们。在约7 K处观察到由于BH和GaH对引起的光吸收峰的强度。发现BH对和GaH对在一个阶段和两个阶段分别随着照射剂量的增加而降低。这些减少的原因被认为是由于这些对与自我插页式广告之间的互动所致。

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