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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Characteristics of Highly Sensitive pH Sensors with Charge Accumulation Operation
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Characteristics of Highly Sensitive pH Sensors with Charge Accumulation Operation

机译：具有电荷累积功能的高灵敏度pH传感器的特性

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摘要

A charge-transfer-type pH sensor operated by charge accumulation was demonstrated, and it was confirmed that its pH sensitivity was 1130 mV/pH with five signal integration cycles. The most familiar pH sensor using a semiconductor is the ion-sensitive field effect transistor (ISFET). The sensitivity of our pH sensor was 20 times higher than that of the ISFET. The sensitivity of the ISFET, which is similar in structure to a metal-insulator-semiconductor (MIS) structure, is restricted by the Nernst equation (59 mV/pH at room temperature). The output signal from an ISFET disappears into its noise as pH variation becomes small. The charge-transfer-type pH sensor increases the pH output signal to integrate signals in the time domain that are noise-free. It is expected that with this sensor it is possible to measure small pH signal variations.
机译：证明了通过电荷累积操作的电荷转移型pH传感器，并证实了其在五个信号积分循环中的pH灵敏度为1130 mV / pH。最熟悉的使用半导体的pH传感器是离子敏感场效应晶体管（ISFET）。我们的pH传感器的灵敏度是ISFET的20倍。 ISFET的灵敏度在结构上类似于金属-绝缘体-半导体（MIS）结构，但受能斯特方程的限制（室温下为59 mV / pH）。随着pH值的变化变小，来自ISFET的输出信号就会消失在噪声中。电荷转移型pH传感器增加pH输出信号，以在时域积分无噪声的信号。期望使用该传感器可以测量小的pH信号变化。

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