首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Reduction in Escape Times of Photogenerated Charge Carriers with Asymmetric Intrastep Quantum Wells and Subsequent Improvement in Saturation Optical Intensity
【24h】

Reduction in Escape Times of Photogenerated Charge Carriers with Asymmetric Intrastep Quantum Wells and Subsequent Improvement in Saturation Optical Intensity

机译:减少具有不对称步内量子阱的光生载流子的逸出时间,并随后提高饱和光强度

获取原文
获取原文并翻译 | 示例
           

摘要

Escape times of photogenerated charge carriers from an InGaAsP intrastep quantum well (IQW) are calculated and compared with those from a conventional quantum well (QW). Since the red shift of the IQW is initiated at a higher electric field, the escape times from the IQW are smaller than those from the conventional QW at given values in modulator transmission. From the reduction in escape times, improvements in the exciton saturation intensity are estimated to be a factor of ~5 for both high and low modulator-transmission points.
机译:计算了从InGaAsP台阶内量子阱(IQW)产生的光生电荷载流子的逸出时间,并将其与常规量子阱(QW)的逸出时间进行了比较。由于IQW的红移是在较高的电场下启动的,因此在调制器传输中,在给定值下,来自IQW的逸出时间要小于来自传统QW的逸出时间。从逃逸时间的减少中,对于高和低调制器传输点,激子饱和强度的提高估计约为5倍。

著录项

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号