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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Distinct Fine and Coarse Ripples on 4H-SiC Single Crystal Induced by Femtosecond Laser Irradiation
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Distinct Fine and Coarse Ripples on 4H-SiC Single Crystal Induced by Femtosecond Laser Irradiation

机译:飞秒激光辐照在4H-SiC单晶上产生明显的细和粗波纹

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摘要

Upon femtosecond pulsed-laser irradiation, periodic structures referred to as "ripples" were fabricated on the surface of a 4H-SiC single crystal. The periodic structures consisted of two concentric regions in the irradiated spots which were clearly distinguished by the period. Surface morphologies were characterized as a function of energy, accumulation number, and interval of pulses. The difference in the threshold of fine and coarse ripples was identified for the first time. The possible formation mechanisms of these structures were discussed.
机译:飞秒脉冲激光辐照后,在4H-SiC单晶的表面上形成了称为“波纹”的周期性结构。周期性结构由辐照斑点中的两个同心区域组成,这些同心区域由周期明显区分。表面形貌被表征为能量,累积数和脉冲间隔的函数。首次确定了细纹和粗纹纹波阈值的差异。讨论了这些结构的可能形成机理。

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