Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy

Xinqiang Wang; Song-Bek Che; Yoshihiro Ishitani; Akihiko Yoshikawa

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Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy

机译：分子束外延法逐步生长In-InN

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摘要

The step-flow mode growth of an In-polar InN epilayer on a GaN template was achieved by molecular beam epitaxy. A uniform terrace structure was observed with a step height of one monolayer. The surface rms roughness was less than 1 nm over a 10 x 10 μm~2 area. To obtain the step-flow mode growth, it was preferable to use a slightly In-rich growth condition in the In-polarity growth regime, a GaN template of low dislocation density, and a high epitaxial temperature. A typical electron concentration of bulk InN was 5-6 x 10~(17) cm~(-3) with a Hall mobility of 1400cm~2/(Vs).

机译：GaN模板上的In-InN外延层的阶梯流模式生长是通过分子束外延实现的。观察到具有一个单层台阶高度的均匀平台结构。在10 x 10μm〜2的面积上，表面均方根粗糙度小于1 nm。为了获得阶梯流模式生长，优选在In-极性生长方案中使用稍微富In的生长条件，低位错密度的GaN模板和高外延温度。 InN的典型电子浓度为5-6 x 10〜（17）cm〜（-3），霍尔迁移率为1400cm〜2 /（Vs）。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2006年第28期|p.L730-L733|共4页
作者
Xinqiang Wang; Song-Bek Che; Yoshihiro Ishitani; Akihiko Yoshikawa;
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作者单位

Department of Electronics and Mechanical Engineering, Center for Frontier Electronics and Photonics, and InN-Project as a CREST program of JST, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
In-polar InN; surface morphology; MBE; step-flow growth; photoluminescence;

机译：极性InN;表面形貌;MBE;阶梯流生长;光致发光;

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专利

1. In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN [J] . Ke Wang, Tomohiro Yamaguchi, Tsutomu Araki, Japanese journal of applied physics.Part 1.Regular papers & short notes . 2011,第1ISSUE2期

机译：In-Polar InN分子束外延生长机理的原位研究
2. Growth of In-polar and N-polar InN nanocolumns on GaN templates by molecular beam epitaxy [J] . Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani, Physica Status Solidi. C, Conferences and critical reviews . 2006,第6期

机译：通过分子束外延生长GaN模板上的In和N极性InN纳米柱
3. In-polar InN grown by plasma-assisted molecular beam epitaxy [J] . Chad S. Gallinat, Gregor Koblmueller, Jay S. Brown, Applied Physics Letters . 2006,第3期

机译：等离子体辅助分子束外延生长的极性InN
4. Growth of InN by Plasma-Assisted Molecular Beam Epitaxy on InN/GaN and p-GaN Templates [C] . E. D. Readinger, G. D. Chern, M. L. Reed, State-of-the-Art Program on Compound Semiconductors . 2007

机译：Inn / GaN和P-GaN模板上等离子辅助分子束外延
5. Growth and Behaviors of Inn/Gan Multiple Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy [D] . Li, Chen. 2018

机译：等离子体辅助分子束外延的Inn / GaN多量子孔的生长和行为
6. High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy [O] . Tao Wang, Xinqiang Wang, Zhaoying Chen, 2018

机译：分子束外延生长的InGaN / InN异质界面上的高迁移率二维电子气
7. In-polar InN grown by plasma-assisted molecular beam epitaxy [O] . Chad S. Gallinat, Gregor Koblmüller, Jay S. Brown, 2006

机译：由等离子辅助分子束外延生长的极地宾馆

Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy

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