A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low RESET Current and Power Consumption

You Yin; Akihira Miyachi; Daisuke Niida; Hayato Sone; Sumio Hosaka

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A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low RESET Current and Power Consumption

机译：一种新颖的横向相变随机存取存储器，具有超低的RESET电流和功耗特征

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摘要

We have fabricated and studied single lateral phase-change random-access-memory (PRAM), which has a confined Ge_2Sb_2Te_5 (GST) channel connected by two wide TiN electrodes of relatively low resistivity. Its switching current for RESET operation could be as low as 4-20μA, about one or two orders of magnitude lower than that of the conventional bottom contact PRAM cell. Its corresponding switching power for RESET operation is about 2-4μW. The reason for such ultra low RESET current and power could be that Joule heating occurred mainly in the GST channel, instead of the resistive heater in the conventional PRAM cell.

机译：我们已经制造并研究了单个横向相变随机存取存储器（PRAM），该存储器具有由两个相对较低电阻率的宽TiN电极连接的受限Ge_2Sb_2Te_5（GST）通道。其用于RESET操作的开关电流可以低至4-20μA，比传统的底部接触PRAM单元的开关电流低约一两个数量级。 RESET操作对应的开关功率约为2-4μW。如此低的RESET电流和功率的原因可能是焦耳热主要发生在GST通道中，而不是传统PRAM单元中的电阻加热器。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2006年第28期|p.L726-L729|共4页
作者
You Yin; Akihira Miyachi; Daisuke Niida; Hayato Sone; Sumio Hosaka;
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作者单位

Department of Nano-Material Systems, Graduate School of Engineering, Gunma University, 1-5-1 Tenjin, Kiryu, Gunma 376-8515, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
phase change; chalcogenide; ultra low Reset current; ultra low power consumption; lateral PRAM;

机译：相变硫族化物超低复位电流超低功耗横向PRAM;

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专利

1. Simulation of phase-change random access memory with ring-type contactor for low reset current by finite element modelling [J] . Gong YF, Ling Y, Song ZT, Chinese physics letters . 2008,第9期

机译：有限元建模模拟低复位电流的环形接触器相变随机存取存储器
2. Simulation of Phase-Change Random Access Memory with Ring-Type Contactor for Low Reset Current by Finite Element Modelling [J] . GONG Yue-Feng, LING Yun, SONG Zhi-Tang, 中国物理快报：英文版 . 2008,第009期

机译：有限元建模的低复位电流环形接触器相变随机存取存储器仿真
3. Simulation of Proposed Confined-Chalcogenide Phase-Change Random Access Memory for Low Reset Current by Finite Element Modelling [J] . You Yin, Hayato Sone, Sumio Hosaka Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第8A期

机译：有限元建模模拟拟议的低硫电流受限硫族化物相变随机存取存储器
4. Lowering the Reset Current and Power Consumption of Phase-Change Memories with Carbon-Doped Ge2Sb2Te5 [C] . Hubert Q., Jahan C., Toffoli A., Memory Workshop (IMW), 2012 4th IEEE International . 2012

机译：掺碳的Ge2Sb2Te5降低了相变存储器的复位电流和功耗
5. Towards Data Reliable, Low-Power, and Repairable Resistive Random Access Memories. [D] . Ghofrani, Amirali. 2016

机译：迈向数据可靠，低功耗和可修复的电阻式随机存取存储器。
6. Power- and Low-Resistance-State-Dependent Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory [O] . Sungjun Kim, Byung-Gook Park 2016

机译：基于SiN的电阻式随机存取存储器中与功率和低电阻状态相关的双极性复位开关转换
7. Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory [O] . Sungjun Kim, Byung-Gook Park 2016

机译：基于SiN的电阻式随机存取存储器中与功率和低电阻状态相关的双极性复位开关转换

A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low RESET Current and Power Consumption

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