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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Dislocation Density and Critical Current Density of Sm_(1+x)Ba_(2-x)Cu_3O_y Films Prepared by Various Fabrication Processes
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Dislocation Density and Critical Current Density of Sm_(1+x)Ba_(2-x)Cu_3O_y Films Prepared by Various Fabrication Processes

机译:通过各种制造工艺制备的Sm_(1 + x)Ba_(2-x)Cu_3O_y薄膜的位错密度和临界电流密度

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摘要

Dislocations are effective flux-pinning centers in REBa_2Cu_3O_y films at a magnetic field. To investigate the relationship between critical current density (J_c) and dislocation density, we discussed the dislocations in conventional pulsed-laser-deposition (PLD)-SmBCO films, vapor-liquid-solid (VLS)-SmBCO films, and low-temperature growth (LTG)-SmBCO films. The LTG-SmBCO and VLS-SmBCO films showed high-J_c at low magnetic fields. From the observation of etch pits, we found that the LTG-SmBCO and VLS-SmBCO films had high-dislocation densities. We speculate that J_c at low-magnetic fields is affected by dislocation density. LTG is effective for increasing dislocation density without deteriorating crystallinity or superconducting properties.
机译:位错是REBa_2Cu_3O_y膜中磁场的有效通量钉扎中心。为了研究临界电流密度(J_c)与位错密度之间的关系,我们讨论了常规脉冲激光沉积(PLD)-SmBCO膜,汽-液-固(VLS)-SmBCO膜中的位错以及低温生长(LTG)-SmBCO膜。 LTG-SmBCO和VLS-SmBCO膜在低磁场下显示高J_c。从蚀刻坑的观察,我们发现LTG-SmBCO和VLS-SmBCO膜具有高位错密度。我们推测,低磁场下的J_c受位错密度的影响。 LTG可有效地增加位错密度而不会降低结晶度或超导性能。

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