Reproducing Subthreshold Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors under Shallow Trench Isolation Mechanical Stress Using a Stress-Dependent Diffusion Model

Yi-Ming Sheu; Sheng-Jier Yang; Chih-Chiang Wang; Chih-Sheng Chang; Ming-Jer Chen; Sally Liu; Carlos H. Diaz

首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Reproducing Subthreshold Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors under Shallow Trench Isolation Mechanical Stress Using a Stress-Dependent Diffusion Model

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Reproducing Subthreshold Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors under Shallow Trench Isolation Mechanical Stress Using a Stress-Dependent Diffusion Model

机译：应力依赖扩散模型在浅沟槽隔离机械应力下重现金属氧化物半导体场效应晶体管的亚阈值特性

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摘要

N-channel metal-oxide-semiconductor field effect transistors (MOSFETs) with a lightly doped well exhibit subthreshold current versus voltage (Ⅰ-Ⅴ) characteristics that are sensitive to shallow trench isolation (STI) mechanical stress. Such striking dependencies offer the opportunity to validate a proposed two-dimensional (2D) process model that relates the impurity diffusion to the mechanical stress throughout the substrate. With the assistance of sophisticated process/device simulations, the model appears to satisfactorily reproduce subthreshold Ⅰ-Ⅴ characteristics for different active area lengths and different substrate biases. The stress-dependent point defect equilibrium concentration and diffusion model are also implemented to evaluate the stress effect on transient enhanced diffusion.

机译：具有轻掺杂阱的N沟道金属氧化物半导体场效应晶体管（MOSFET）具有亚阈值电流与电压（Ⅰ-Ⅴ）特性，对浅沟槽隔离（STI）机械应力敏感。这种惊人的依赖性为验证所提出的二维（2D）工艺模型提供了机会，该工艺模型将杂质扩散与整个基板的机械应力相关联。借助复杂的工艺/器件仿真，该模型似乎可以令人满意地重现不同有效面积长度和不同衬底偏置的亚阈值Ⅰ-Ⅴ特性。还采用了应力相关的点缺陷平衡浓度和扩散模型来评估应力对瞬态增强扩散的影响。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2006年第32期|p.L849-L851|共3页
作者
Yi-Ming Sheu; Sheng-Jier Yang; Chih-Chiang Wang; Chih-Sheng Chang; Ming-Jer Chen; Sally Liu; Carlos H. Diaz;
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作者单位

Device Engineering Division, Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Sixth Road, Science-Based Industrial Park, Hsin-Chu 300, Taiwan, R.O.C.;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
dopant diffusion; mechanical stress; strain; shallow trench isolation; MOSFET; modeling; simulation;

机译：掺杂扩散;机械应力;应变;浅沟槽隔离;MOSFET;建模;仿真;

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1. Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors [J] . Yao-Tsung Huang, San-Lein Wu, Hau-Yu Lin, Japanese journal of applied physics . 2011,第4ISSUE2期

机译：减小浅沟槽隔离机械应力对40 nm n型金属氧化物半导体场效应晶体管的有效长度的影响
2. Temperature Dependence of Shallow-Trench-Isolation Mechanical Stress on n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors [J] . Jinn-Horng LAI, Jeng GONG, Tsuoe-Hsiang LIAO, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第7A期

机译：浅沟槽隔离机械应力对n沟道金属氧化物半导体场效应晶体管的温度依赖性
3. The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects [J] . LUO Jie-Xin, CHEN Jing, CHAI Zhan, 中国物理快报：英文版 . 2014,第012期

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4. Modeling of cumulative thermo-mechanical stress (CTMS) produced by the shallow trench isolation process for 1 Gb DRAM and beyond [C] . Tai-Kyung Kim, Do-Hyung Kim Electron Devices Meeting, 1998. IEDM '98 Technical Digest., International . 1998

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7. Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect TK7871.99.M44 T161 2008 f rb. [O] . Tan Philip Beow Yew 2008

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Reproducing Subthreshold Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors under Shallow Trench Isolation Mechanical Stress Using a Stress-Dependent Diffusion Model

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