Growth and Characterization of Epitaxial DyScO_3 Films on SrTiO_3

Takayuki Uozumi; Keisuke Shibuya; Tsuyoshi Ohnishi; Taisuke Sato; Mikk Lippmaa

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Growth and Characterization of Epitaxial DyScO_3 Films on SrTiO_3

机译：SrTiO_3上外延DyScO_3薄膜的生长和表征

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Epitaxial films of wide-gap insulators DyScO_3 and CaHfO_3 were grown on SrTiO_3(100) substrates to test the suitability of these films for use as gate insulators in oxide-based field-effect devices. The surface morphologies and breakdown characteristics of epitaxial DyScO_3 and CaHfO_3 films were studied and correlated with film thickness. It was shown that due to a smaller lattice mismatch with the SrTiO_3 substrate, DyScO_3 films have lower surface roughness and higher breakdown fields than CaHfO_3 films grown under the same conditions. The highest breakdown field of 8 MV/cm was obtained in 10-nm-thick DyScO_3 films, which had atomically flat surfaces.

机译：在SrTiO_3（100）衬底上生长宽间隙绝缘体DyScO_3和CaHfO_3的外延膜，以测试这些膜是否适合用作基于氧化物的场效应器件中的栅绝缘体。研究了外延DyScO_3和CaHfO_3薄膜的表面形貌和击穿特性，并与薄膜厚度相关。结果表明，由于与SrTiO_3衬底的晶格失配较小，与在相同条件下生长的CaHfO_3膜相比，DyScO_3膜具有较低的表面粗糙度和较高的击穿场。在具有原子平面的10nm厚的DyScO_3薄膜中获得了8 MV / cm的最高击穿场。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2006年第32期|p.L830-L832|共3页
作者
Takayuki Uozumi; Keisuke Shibuya; Tsuyoshi Ohnishi; Taisuke Sato; Mikk Lippmaa;
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作者单位

Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
gate insulator; wide-gap insulator; SrTiO_3 substrate; DyScO_3; CaHfO_3; scandate; hafnate; field-effect transistor; oxide electronics;

机译：栅极绝缘体;宽间隙绝缘体;SrTiO_3衬底;DyScO_3;CaHfO_3;扫描日期;酸盐;场效应晶体管;氧化物电子学;

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Growth and Characterization of Epitaxial DyScO_3 Films on SrTiO_3

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