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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Flux Growth of Pure and Lanthanum (La~(3+))-Substituted Bi_4Ti_3O_(12) Single Crystals and Their Characterization
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Flux Growth of Pure and Lanthanum (La~(3+))-Substituted Bi_4Ti_3O_(12) Single Crystals and Their Characterization

机译：纯和镧（La〜（3+））取代的Bi_4Ti_3O_（12）单晶的通量生长及其表征

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摘要

In this paper, we report the growth of pure Bi_4Ti_3O_(12) (BIT) and Bi_(4-x)La_xTi_3O_(12) (x = 0.25, 0.50 and 0.75) single crystals by high-temperature solution growth (flux growth). The effects of La substitution on structural, optical transmission, ionic conductivity, dielectric constant and ferroelectric properties have been studied. Powder X-ray diffraction (XRD) and Differential thermal analysis (DTA) results reveal that the presence of La increases lattice constant (along the b- and c-axes) and liquidus and crystallization temperature of BIT. The deviation in La concentration in grown crystals from the initial La concentration was revealed by Energy dispersive X-ray analysis (EDAX). The incorporation of La ions also shifts the fundamental absorption edge in the UV-vis spectrum towards the higher-energy region and changes the absorption coefficient of BIT. Decreases in the dielectric constant, loss factor and ionic conductivity of BIT were observed with an increase in La concentration. Although, a significant improvement in remnant polarization was observed in P-E studies, La incorporation markedly increased the coercive field of BIT.
机译：在本文中，我们报告了通过高温溶液生长（通量增长）生长的纯Bi_4Ti_3O_（12）（BIT）和Bi_（4-x）La_xTi_3O_（12）（x = 0.25、0.50和0.75）单晶的生长。研究了镧取代对结构，光传输，离子电导率，介电常数和铁电性能的影响。粉末X射线衍射（XRD）和差热分析（​​DTA）结果表明，La的存在增加了晶格常数（沿b轴和c轴）以及液相线和BIT的结晶温度。通过能量色散X射线分析（EDAX）揭示了生长晶体中La浓度与初始La浓度的偏差。 La离子的掺入还将UV-vis光谱中的基本吸收边缘移向较高能量区域，并改变了BIT的吸收系数。随着La浓度的增加，观察到BIT的介电常数，损耗因子和离子电导率降低。尽管在P-E研究中观察到残余极化的显着改善，但是La的掺入显着增加了BIT的矫顽力。

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