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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Photocurrent Characteristics of CdTe Nanoparticles
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Photocurrent Characteristics of CdTe Nanoparticles

机译：CdTe纳米粒子的光电流特性

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The photocurrent of CdTe nanoparticles is characterized in this study to investigate the transport mechanism of charge carriers in these nanoparticles. Time-dependent photocurrent was measured while above-gap (458 nm wavelength) light was switched on and off periodically. Rapidly and slowly responding photocurrents overlapped in the time-dependent photocurrent. Our careful investigation into the time-dependent photocurrent reveals that photogenerated electrons contribute to the slowly responding photocurrent and that photogenerated holes give rise to the rapidly responding photocurrent. On the basis of our experimental results, we suggest that the transport of the photogenerated electrons takes place in the conduction band after their trapping and detrapping processes and that the photogenerated holes are transported in the valence band. In addition, time-dependent photocurrent excited by below-gap (633 nm wavelength) light, dark current, and current-voltage (Ⅰ-Ⅴ) loops are analyzed in this paper.
机译：在这项研究中，对CdTe纳米粒子的光电流进行了表征，以研究这些纳米粒子中载流子的传输机理。测量时间相关的光电流，同时周期性地打开和关闭间隙以上（458 nm波长）的光。快速和缓慢响应的光电流与时间相关的光电流重叠。我们对随时间变化的光电流的仔细研究表明，光生电子有助于缓慢响应的光电流，而光生空穴则引起快速响应的光电流。根据我们的实验结果，我们建议光生电子的传输发生在其俘获和去俘获过程之后的导带中，并且光生空穴在价带中传输。此外，本文还分析了由间隙以下（633 nm波长）的光，暗电流和电流-电压（Ⅰ-Ⅴ）回路激发的随时间变化的光电流。

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