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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Separation between Surface and Volume Decay Times of Photoconductivity in p-Type Silicon Wafers
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Separation between Surface and Volume Decay Times of Photoconductivity in p-Type Silicon Wafers

机译：p型硅晶片中光电导的表面衰减和体积衰减时间之间的分离

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摘要

Excess photocarriers excited in silicon wafers are annihilated both in surface and volume regions independently of each other. When a photoconductive decay curve obtained with the microwave-detected photoconductive decay method is concave in semi-logarithmic scale, those two decay times in the different regions can be separately derived from the experimental data on assuming two independent exponential functions for the annihilation of excess carriers. The separation procedure can be completed using a commercially available computer code. The surface decay times vary from more than 95 to 13 μs when the p-type silicon wafer rinsed with a hydrofluoric acid solution is kept exposed to the room air, while the volume decay times of around 1.7 蘳 thus obtained are almost constant and quite reasonable in comparison with the theoretically expected one.
机译：在硅晶片中激发的过量光载流子在表面和体积区域中彼此独立地被an灭。当用微波检测的光导衰减方法获得的光导衰减曲线在半对数尺度上是凹的时，在假定两个独立的指数函数来消灭多余载流子的情况下，可以从实验数据中分别得出不同区域中的这两个衰减时间。 。分离过程可以使用可商购的计算机代码完成。当用氢氟酸溶液冲洗的p型硅晶片保持暴露在室内空气中时，表面衰减时间从大于95到13μs不等，而由此获得的约1.7 volume的体积衰减时间几乎恒定且相当与理论上预期的相比是合理的。

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