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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Study on Reverse Twist Depending on Rubbing Direction for Fringe-Field Switching Mode
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Study on Reverse Twist Depending on Rubbing Direction for Fringe-Field Switching Mode

机译：边缘场切换模式下基于摩擦方向的反扭研究

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摘要

We studied the reverse twist near the pixel edge depending on the rubbing direction for the fringe-field switching (FFS) mode. At the active region, liquid crystal (LC) dynamics and transmittance are the same, irrespective of the rubbing direction, that is, clockwise or counterclockwise with respect to the x-axis, because only one electric field direction exists. On the other hand, LC dynamics and transmittance near the pixel edge, where various field directions are generated, depend on the initial rubbing direction because the position of the reverse twist is decided by the angle between the electric field direction and LC director under a bias voltage. For example, when the rubbing angle is 7°, the reverse twist appears at the bottom of the right sharp corner of the pixel edge so that the reverse region exists far from main active region. However, when the rubbing angle is —7°, the reverse twist appears on top of the right sharp corner of the pixel edge, resulting in the region becoming closer to the main active area and the unstable disclination lines (DLs) easily intruding into the active region. Therefore, it is necessary to keep the reverse twist region far from the active region and this is possible by controlling the rubbing direction in the design of a pixel electrode. As a result, we can minimize the permeation of DLs into the main active region.
机译：对于边缘场切换（FFS）模式，我们根据摩擦方向研究了像素边缘附近的反向扭曲。在有源区域，由于仅存在一个电场方向，所以与摩擦方向无关，即相对于x轴为顺时针方向或逆时针方向，液晶（LC）的动力学和透射率相同。另一方面，在产生各种场方向的像素边缘附近的LC动态和透射率取决于初始摩擦方向，这是因为反向扭曲的位置由偏置下电场方向和LC指向矢之间的角度决定。电压。例如，当摩擦角为7°时，反向扭曲出现在像素边缘的右尖角的底部，使得反向区域远离主有源区域存在。但是，当摩擦角为-7°时，反向扭曲会出现在像素边缘的右尖角顶部，从而导致该区域变得更靠近主有效区域，并且不稳定的旋错线（DLs）容易侵入该区域。活动区域。因此，需要使反向扭曲区域远离有源区域，并且这可以通过在像素电极的设计中控制摩擦方向来实现。结果，我们可以最小化DLs渗透到主要活性区域中。

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