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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Self-Consistent Particle Modeling of Inductively Coupled CF_4 Plasmas: Effect of Wafer Biasing
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Self-Consistent Particle Modeling of Inductively Coupled CF_4 Plasmas: Effect of Wafer Biasing

机译：感应耦合CF_4等离子体的自洽粒子建模：晶圆偏置的影响

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摘要

The structure of axisymmetrical inductively coupled CF_4 plasmas with wafer biasing was examined by the particle-in-cell/ Monte Carlo method. The simulation was performed under the conditions that gas pressure is fixed at 5 mTorr and power deposition is fixed at 200 W. The effect of biasing frequency on plasma structure and the energy of the ions that were incident on the wafer was examined. The biasing frequency was changed from 0.8 to 25 MHz. Biasing frequency affects the plasma structure. Ion energy distribution strongly depends on biasing frequency and ion mass, namely, the ratio of ion transit time across the sheath to rf period. These results are consistent with previous measurements.
机译：通过晶胞/蒙特卡洛方法研究了带有晶片偏置的轴对称感应耦合CF_4等离子体的结构。在气体压力固定为5 mTorr，功率沉积固定为200 W的条件下进行模拟。检查了偏置频率对等离子体结构和入射到晶片上离子能量的影响。偏置频率从0.8 MHz更改为25 MHz。偏置频率会影响等离子体结构。离子能量分布在很大程度上取决于偏压频率和离子质量，即离子在鞘中的传输时间与RF周期的比值。这些结果与先前的测量结果一致。

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