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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Effect of Plasma Treatment and Dielectric Diffusion Barrier on Electromigration Performance of Copper Damascene Interconnects
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Effect of Plasma Treatment and Dielectric Diffusion Barrier on Electromigration Performance of Copper Damascene Interconnects

机译：等离子体处理和介电扩散阻挡层对铜镶嵌互连线电迁移性能的影响

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摘要

The effect of plasma treatment and a dielectric diffusion barrier on electromigration (EM) performance was examined. The characteristics and adhesion properties at the interface between copper (Cu) and the dielectric diffusion barrier were also investigated by scanning transmission electron microscopy-electron energy loss spectrometry (STEM-EELS). The existence of oxygen at the interface after hydrogen (H_2) plasma treatment, which has a large pre-exponential factor, causes a large EM drift velocity. Ammonium (NH_3) plasma treatment can reduce the Cu oxide completely, resulting in an improvement in EM performance. On the other hand, the dielectric diffusion barrier of SiC_xN_y, which has a better adhesion property then SiC_x, reduces EM drift velocity and provides a larger activation energy. The reduction of CuO_x completely by plasma treatment is essential and the selection of dielectric diffusion barrier is important to improve the EM performance of Cu damascene interconnects.
机译：检查了等离子体处理和介电扩散阻挡层对电迁移（EM）性能的影响。还通过扫描透射电子显微镜-电子能量损失谱仪（STEM-EELS）研究了铜（Cu）和介电扩散阻挡层之间的界面处的特性和粘附特性。氢（H_2）等离子体处理后界面处存在的氧具有较大的指数前因数，从而导致较大的EM漂移速度。铵（NH_3）等离子体处理可以完全还原铜氧化物，从而改善EM性能。另一方面，SiC_xN_y的介电扩散势垒比SiC_x更好，它降低了EM漂移速度并提供了更大的活化能。通过等离子体处理完全还原CuO_x是必不可少的，选择介电扩散势垒对于提高铜镶嵌互连的EM性能很重要。

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