Tunneling-Electron-Induced Hopping of Methylthiolate on Cu(111)

Michiaki OHARA; Yousoo KIM; Maki KAWAI

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Tunneling-Electron-Induced Hopping of Methylthiolate on Cu(111)

机译：隧穿电子诱导的Cu（111）上硫代甲烷酸的跳跃

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The hopping motion of methylthiolate, CH_3S, on Cu(111) was effectively induced by injecting tunneling electrons from the tip of a scanning tunneling microscope (STM). When the tunneling electrons are injected into an isolated CH_3S at liquid He temperature in which the motion is originally frozen, the hopping phenomenon of CH_3S from a hollow site to a neighboring hollow site is observed. This phenomenon shows a clear threshold in the applied bias voltage corresponding to the vibrational excitation energy of the C-S stretching mode in CH_3S. We suggest a model in which the hindered translational mode, directly related to the hopping motion, is excited in accordance with the excitation of the C-S stretching mode through anharmonic coupling.

机译：通过从扫描隧道显微镜（STM）的尖端注入隧道电子，可以有效地诱导甲基硫醇盐CH_3S在Cu（111）上的跳跃运动。当在运动最初被冻结的液态He温度下将隧穿电子注入隔离的CH_3S时，观察到CH_3S从空心位置跳到相邻空心位置的跳变现象。这种现象显示出在施加的偏置电压中有一个清晰的阈值，该阈值对应于CH_3S中C-S拉伸模式的振动激发能。我们建议一个模型，其中与跳跃运动直接相关的受阻平移模式根据通过非谐耦合的C-S拉伸模式的激发而被激发。

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来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2006年第3b期|p.2022-2025|共4页
作者
Michiaki OHARA; Yousoo KIM; Maki KAWAI;
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作者单位

Surface Chemistry Laboratory, RIKEN (The Institute of Physical and Chemical Research), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
STM; CH_3S; adsorption site; single-molecule manipulation; hopping phenomenon;

机译：STM;CH_3S;吸附位点;单分子操纵;跳跃现象;

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Tunneling-Electron-Induced Hopping of Methylthiolate on Cu(111)

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