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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Significance of Gate Oxide Thinning below 1.5 nm on 1/f Noise Behavior in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Electrical Stress
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Significance of Gate Oxide Thinning below 1.5 nm on 1/f Noise Behavior in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Electrical Stress

机译：电应力下n沟道金属氧化物半导体场效应晶体管1 / f噪声行为下1.5 nm以下栅极氧化物变薄的意义

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摘要

The purpose of this study is to investigate the effects of electrical stress on the 1/f noise behavior in n-channel metal-oxide-semiconductor transistors with ultrathin gate oxides. Even under a weak electrical stress, the drain current noise (S_(id)) of the device with a 1.4-nm-thick oxide was found to increase abruptly beyond a certain critical gate bias. This deteriorated noise property was proven to be from simultaneous increases in gate current noise (S_(ig)) and the correlation between S_(id) and S_(ig), which were directly related to oxide trap generation and gate/drain current (I_g/I_d) ratio, respectively. Meanwhile, the increase in S_(id) in the device with a 2,3-nm-thick oxide after stress, with a comparable transconductance degradation, was relatively insignificant because of the device's smaller I_g/I_d ratio, even if the measured S_(ig) was comparable to that of the thinner oxide device. Consequently, the 1/f noise degradation could be much more significant than the accompanying DC characteristic degradations in the thin gate oxide below 1.5 nm.
机译：本研究的目的是研究电应力对具有超薄栅极氧化物的n沟道金属氧化物半导体晶体管的1 / f噪声行为的影响。即使在弱电应力下，具有1.4 nm厚氧化层的器件的漏极电流噪声（S_（id））也会突然增加，超过某个临界栅极偏置电压。事实证明，这种恶化的噪声特性是由于栅极电流噪声（S_（ig））同时增加以及S_（id）和S_（ig）之间的相关性而引起的，这与氧化物陷阱的产生和栅极/漏极电流（I_g）直接相关。 / I_d）比率。同时，应力后2,3nm厚的氧化物在器件中的S_（id）的增加（具有可比的跨导降级）相对可忽略不计，因为该器件的I_g / I_d比较小，即使测得的S_（ ig）与更薄的氧化物器件相当。因此，1 / f噪声的下降可能比1.5 nm以下薄栅极氧化物中伴随的DC特性下降更为显着。

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