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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Characterization of 45 nm Attenuated Phase Shift Mask Lithography with a Hyper Numerical Aperture ArF Tool
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Characterization of 45 nm Attenuated Phase Shift Mask Lithography with a Hyper Numerical Aperture ArF Tool

机译：使用超数值孔径ArF工具表征45 nm衰减相移掩模光刻

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摘要

In the 45 nm half pitch node, a mask induced polarization effect appears. Because of this effect, intensity of diffracted light depends on a pattern size and a diffraction order. This is pronounced in an attenuated phase shift mask (attPSM). A mask topography effect has to be considered for rigorous simulation. A small window attributable to diffraction efficiency is generated, because of an insufficient ratio of 1st order and 0th order diffracted light from the attPSM. Two approaches to produce a sufficient ratio, namely, a low transmittance layer attPSM and a biased pattern attPSM, were investigated by simulation. A mask bias of more than 10 nm on both sides is required to generate an optimal diffraction efficiency ratio for the 0th and 1st orders. The low transmittance (around 1%) attPSM had higher contrast at 45 nm half pitch in the resist image than the biased attPSM. It was also shown that a phase difference between diffraction orders caused lower contrast imaging.
机译：在45 nm半节距节点中，出现了掩模引起的偏振效应。由于这种效果，衍射光的强度取决于图案尺寸和衍射级数。这在衰减的相移掩模（attPSM）中很明显。为了进行严格的模拟，必须考虑掩模的形貌效应。由于来自attPSM的1次和0次衍射光的比率不足，因此产生了可归因于衍射效率的小窗口。通过仿真研究了两种产生足够比率的方法，即低透射层attPSM和偏置图案attPSM。为了产生第0级和第1级的最佳衍射效率比，需要在两侧都施加大于10 nm的掩模偏置。与偏光的attPSM相比，低透射率（约1％）的attPSM在45 nm半间距的抗蚀剂图像中具有更高的对比度。还显示出衍射级之间的相位差引起较低的对比度成像。

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