Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors

Kentaro Tani; Hiroshi Ito; Yutaka Ohno; Shigeru Kishimoto; Mina Okochi; Hiroyuki HONDA; Takashi MIZUTANI

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Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors

机译：使用碳纳米管场效应晶体管制造抗原传感器

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Antigen sensors using carbon nanotube field effect transistors (CNT-FETs) were fabricated. In order to avoid the problem of exposing source and drain electrodes directly to the phosphate buffered saline (PBS) solution, source and drain electrodes were covered with evaporated SiO film. The immobilization of antibodies on the device surface was confirmed by the observation of fluorescence. Drain current in the sensor device was decreased by the antibody-antigen binding, which suggests a potential use of CNT-FETs as antigen sensors.

机译：制备了使用碳纳米管场效应晶体管（CNT-FET）的抗原传感器。为了避免将源电极和漏电极直接暴露于磷酸盐缓冲盐水（PBS）溶液中的问题，源电极和漏电极都覆盖有蒸发的SiO膜。通过观察荧光确认抗体在装置表面上的固定。抗体-抗原结合减少了传感器设备中的漏极电流，这表明可能将CNT-FET用作抗原传感器。

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来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2006年第6b期|p.5481-5484|共4页
作者
Kentaro Tani; Hiroshi Ito; Yutaka Ohno; Shigeru Kishimoto; Mina Okochi; Hiroyuki HONDA; Takashi MIZUTANI;
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作者单位

Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
nanotube; FET; biosensor; antibody-antigen binding; label free;

机译：纳米管;场效应管;生物传感器;抗体-抗原结合;无标记;

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Fabrication of Antigen Sensors Using Carbon Nanotube Field Effect Transistors

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