Fatigue Properties of Epitaxial Pb(Zr_(0.35)Ti_(0.65))O_3 Films with Various Volume Fractions of 90° Domains Grown on (100)_cSrRuO_3/(100)SrTiO_3 Substrates

Yong Kwan Kim; Hitoshi Morioka; Hiroshi Funakubo

首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Fatigue Properties of Epitaxial Pb(Zr_(0.35)Ti_(0.65))O_3 Films with Various Volume Fractions of 90° Domains Grown on (100)_cSrRuO_3/(100)SrTiO_3 Substrates

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Fatigue Properties of Epitaxial Pb(Zr_(0.35)Ti_(0.65))O_3 Films with Various Volume Fractions of 90° Domains Grown on (100)_cSrRuO_3/(100)SrTiO_3 Substrates

机译：（100）_cSrRuO_3 /（100）SrTiO_3衬底上生长的具有90°畴的不同体积分数的外延Pb（Zr_（0.35）Ti_（0.65））O_3薄膜的疲劳特性

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摘要

(001)/(100)-oriented tetragonal epitaxial Pb(Zr_(0.35),Ti_(0.65))O_3 [PZT] thin films with various volume fractions of 90° domains were grown on (100)_cSrRuO_3 ‖ (100)SrTiO_3 substrates by metalorganic chemical vapor deposition. The polarization-electric field hysteresis curve and fatigue behavior of a PZT capacitor with Pt and SrRuO_3 top electrodes were systematically investigated. In a Pt/PZT/SrRuO_3 capacitor, the degradation of switching polarization occurred between 10~4 and 10~7 cycles. In contrast, a PZT capacitor with SrRuO_3 top electrodes revealed almost fatigue-free behavior up to 10~9 switching cycles. It was found that the fatigue properties of PZT films is strongly dependent on the type of top electrode, irrespective of the volume fraction of the (001) orientation. Moreover, it was also found that the a-domains switching of PZT thin films is independent of the fatigue properties.

机译：在（100）_cSrRuO_3‖（100）SrTiO_3衬底上生长具有（001）/（100）取向四方外延Pb（Zr_（0.35），Ti_（0.65））O_3 [PZT]薄膜，该薄膜具有90°域的各种体积分数通过金属有机化学气相沉积。系统研究了Pt和SrRuO_3上电极的PZT电容器的极化电场滞后曲线和疲劳行为。在Pt / PZT / SrRuO_3电容器中，开关极化的退化发生在10〜4和10〜7个周期之间。相比之下，带有SrRuO_3顶部电极的PZT电容器显示出高达10〜9个开关周期的几乎无疲劳行为。已经发现，PZT膜的疲劳性能在很大程度上取决于顶部电极的类型，而与（001）取向的体积分数无关。此外，还发现PZT薄膜的a区转换与疲劳性能无关。

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来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2006年第8a期|p.6382-6384|共3页
作者
Yong Kwan Kim; Hitoshi Morioka; Hiroshi Funakubo;
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作者单位

Samsung Advanced Institute of Technology;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
epitaxy; domain; PZT; fatigue; MOCVD;

机译：外延;域;PZT;疲劳;MOCVD;

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专利

1. Comparison of electrical properties of (100)/(001)-oriented epitaxial Pb(Zr_(0.35),Ti_(0.65))O_3 thin films with the same (001) domain fraction grown on (100)Si and (100)SrTiO_3 substrates [J] . Yong Kwan Kim, Hitoshi Morioka, Shoji Okamoto, Applied Physics Letters . 2005,第18期

机译：（100）/（001）取向外延Pb（Zr_（0.35），Ti_（0.65））O_3薄膜的电学性能比较，在（100）Si和（100）SrTiO_3衬底上生长具有相同（001）域分数的薄膜
2. Film Thickness Dependence of Crystal Structure in {100}-Oriented Epitaxial Pb(Zr_(0.65)Ti_(0.35))O_3 Films Grown on Single-Crystal Substrates with Different Thermal Expansion Coefficients [J] . Yoshitaka Ehara, Shintaro Yasui, Koji Ishii, Japanese journal of applied physics . 2012,第9ISSUE2期

机译：在具有不同热膨胀系数的单晶衬底上生长的{100}取向外延Pb（Zr_（0.65）Ti_（0.35））O_3薄膜中晶体结构的膜厚度依赖性
3. Domain structure control of (001)/(100)-oriented epitaxial Pb(Zr,Ti)O_3 films grown on (100)_cSrRuO_3/(100)SrTiO_3 substrates [J] . Yong Kwan Kim, Hitoshi Morioka, Risako Ueno, Applied Physics Letters . 2005,第21期

机译：在（100）_cSrRuO_3 /（100）SrTiO_3衬底上生长的（001）/（100）取向外延Pb（Zr，Ti）O_3薄膜的畴结构控制
4. Structural and Ferroelectric Properties of Epitaxial PbZr_(0.52)Ti_(0.48)O_3 and BaTiO_3 Thin Films Prepared on SrRuO_3/SrTiO_3(100) Substrates [C] . J. Rodriguez Contreras, J. Schubert, U. Poppe, Symposium on Ferrolectric Thin Films . 2002

机译：外延PBZR_（0.52）Ti_（0.48）O_3和BATIO_3在SRRUO_3 / SRTIO_3（100）底板上制备的BATIO_3薄膜的结构和铁电性能
5. In-situ observation of ultrafast 90° domain switching under application of an electric field in (100)/(001)-oriented tetragonal epitaxial Pb(Zr0.4Ti0.6)O3 thin films [O] . Yoshitaka Ehara, Shintaro Yasui, Takahiro Oikawa, -1

机译：（100）/（001）取向四方外延Pb（Zr0.4Ti0.6）O3薄膜在电场作用下超快90°域转换的原位观察
6. Crystal structure, electrical properties, and mechanical response of (100)-/(001)-oriented epitaxial Pb(Mg1/3Nb2/3)O 3-PbTiO3 films grown on (100)cSrRuO 3∥(100)SrTiO3 substrates by metal-organic chemical vapor deposition [O] . Yokoyama Shintaro, Okamoto Satoshi, Funakubo Hiroshi, 2006

机译：（100）-/（001）取向的外延Pb（Mg1 / 3Nb2 / 3）O 3-PbTiO3薄膜的晶体结构，电学性质和机械响应，是在金属（100）cSrRuO3∥（100）SrTiO3衬底上生长的有机化学气相沉积
7. Epitaxial Pb(Zr(sub x)Ti(sub 1(minus)x))O(sub 3)/SrRuO(sub 3) (x = 0, 0.35, 0.65) multilayer thin films on SrTiO(sub 3)(100) and MgO(100) prepared by MOCVD and RF sputtering [R] . Foster, C. M., Csencsits, R., Baldo, P. M., 1995

机译：srTiO（sub 3）（100）上的外延pb（Zr（sub x）Ti（sub 1（minus）x））O（sub 3）/ srRuO（sub 3）（x = 0,0.35,0.65）多层薄膜通过mOCVD和RF溅射制备mgO（100）和mgO（100）

Fatigue Properties of Epitaxial Pb(Zr_(0.35)Ti_(0.65))O_3 Films with Various Volume Fractions of 90° Domains Grown on (100)_cSrRuO_3/(100)SrTiO_3 Substrates

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