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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Transport Characteristic Control of Field-Effect Transistors with Single-Walled Carbon Nanotube Films Using Electrode Metals with Low and High Work Functions
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Transport Characteristic Control of Field-Effect Transistors with Single-Walled Carbon Nanotube Films Using Electrode Metals with Low and High Work Functions

机译：高和低功函数电极金属对单壁碳纳米管薄膜场效应晶体管传输特性的控制

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摘要

We have fabrficated field-effect transistors with single-walled carbon nanotube films using various work-function metals (Mg, Al, Ti, and Ni) as the source and drain electrodes to control the transfer characteristic. The n-type transfer characteristic is obtained from the device with low-work-function metal (Mg), and the p-type characteristic is obtained from the device with medium- and high-work-function metals (Al, Ti, and Ni). The ambipolar characteristic of the device with Mg electrodes in air is converted to the n-type characteristic by maintaining in vacuum. The device with Mg as a drain electrode and Ni as a source electrode shows the ambipolar characteristic at small and large drain-source voltages. This device might be able to simultaneously inject electrons and holes into a SWNT.
机译：我们制造了带有单壁碳纳米管薄膜的场效应晶体管，该薄膜使用各种功函数金属（Mg，Al，Ti和Ni）作为源极和漏极来控制传输特性。从具有低功函数金属（Mg）的器件获得n型传递特性，从具有中功函数金属和高功函数金属（Al，Ti和Ni的器件）获得p型特性）。通过保持真空，将空气中带有Mg电极的设备的双极性特性转换为n型特性。以Mg为漏电极，Ni为源电极的器件在大小漏源电压下均表现出双极性特性。该设备可能能够同时将电子和空穴注入SWNT中。

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