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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Reoxidation after NH_3 Plasma Nitridation for Multiple-Thickness Oxynitrides
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Reoxidation after NH_3 Plasma Nitridation for Multiple-Thickness Oxynitrides

机译：NH_3等离子体氮化后对多厚度氧氮化物的再氧化

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摘要

A novel manufacturable multiple gate oxynitride thickness technology is proposed in this work. An ultrathin dielectric film (E_(OT) = 2.5 nm) of lower oxidation growth rate than conventional films was fabricated by NH_3 plasma nitridation. Oxide thickness was reduced by about 80% for samples treated by NH_3 plasma nitridation. However, the thickness limitation is 1.3 nm for NH_3 plasma nitridation. This is believed to be due to nitrogen incorporated in the silicon surface to form a nitridelike thin film, which retarded oxide growth. The effects of NH_3 plasma nitridation were systematically studied, and the rapid thermal N_2O reoxidation of an NH_3 plasma sample was also demonstrated in this work. This novel process improves the gate oxide reliability, decreases bulk trap densities, provides better SILC immunity, and produces less charge trapping and a higher Q_(bd).
机译：在这项工作中提出了一种新颖的可制造的多栅极氮氧化物厚度技术。通过NH_3等离子体氮化制备了比传统薄膜氧化生长速率低的超薄介电薄膜（E_（OT）= 2.5 nm）。对于通过NH_3等离子体氮化处理的样品，氧化物厚度减少了约80％。但是，NH_3等离子体氮化的厚度限制为1.3 nm。据信这是由于氮掺入硅表面形成了类似氮化物的薄膜，从而阻碍了氧化物的生长。系统地研究了NH_3等离子体氮化的影响，并证明了NH_3等离子体样品的快速N_2O热重氧化。这种新颖的工艺提高了栅极氧化物的可靠性，降低了体陷阱的密度，提供了更好的SILC抗扰性，并产生了更少的电荷陷阱和更高的Q_（bd）。

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