Fabrication of Hybrid n-ZnMgO-ZnO/p-AlGaN/p-GaN Light-Emitting Diodes

Hyuck Soo YANG; Sang Youn HAN; Y. W. HEO; K. H. BAIK; D. P. NORTON; S. J. PEARTON; F. REN; A. OSINSKY; J. W. DONG; B. HERTOG; A. M. DABIRAN; P. P. CHOW; L. CHERNYAK; T. STEINER; C. J. KAO; G. C. CHI

首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Fabrication of Hybrid n-ZnMgO-ZnO/p-AlGaN/p-GaN Light-Emitting Diodes

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Fabrication of Hybrid n-ZnMgO-ZnO/p-AlGaN/p-GaN Light-Emitting Diodes

机译：混合n-ZnMgO / n-ZnO / p-AlGaN / p-GaN发光二极管的制作

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We report on the fabrication of UV light-emitting diodes (LEDs) based on a p-n junction n-ZnMgO-ZnO/p-AlGaN/p-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure on p-AlGaN/p-GaN c-plane sapphire templates. Cross-sectional transmission electron microscopy showed single-crystal quality of the pseudomorphically grown ZnO active region of the device. The LEDs were fabricated by a process involving both wet and dry etching. Electroluminescence emission most likely associated with ZnO excitonic transition was observed up to 370℃. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than comparable AlGaN/GaN devices.

机译：我们报告了基于p-n结n-ZnMgO / n-ZnO / p-AlGaN / p-GaN半导体三层异质结构的UV发光二极管（LED）的制造。射频等离子体辅助分子束外延用于在p-AlGaN / p-GaN c面蓝宝石模板上生长完整的异质结构。截面透射电子显微镜显示该器件的假晶生长的ZnO有源区的单晶质量。通过包括湿法蚀刻和干法蚀刻的工艺来制造LED。在高达370℃的温度下观察到最可能与ZnO激子跃迁有关的电致发光。结果表明，与可比的AlGaN / GaN器件相比，基于ZnO的材料具有潜在的成本更低，发射强度可比或更高的UV发射器的潜力。

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来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2005年第10期|p.7296-7300|共5页
作者
Hyuck Soo YANG; Sang Youn HAN; Y. W. HEO; K. H. BAIK; D. P. NORTON; S. J. PEARTON; F. REN; A. OSINSKY; J. W. DONG; B. HERTOG; A. M. DABIRAN; P. P. CHOW; L. CHERNYAK; T. STEINER; C. J. KAO; G. C. CHI;
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Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, U.S.A.;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
ZnO; GaN; UV emitter; light-emitting diodes (LEDs); heterostructure;

机译：ZnO;GaN;UV发射体;发光二极管（LED）;异质结构;

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1. On the polarization effect of the p-EBL/p-AlGaN/p-GaN structure for AlGaN-based deep-ultraviolet light-emitting diodes [J] . Tian Kangkai, Chu Chunshuang, Shao Hua, Superlattices and microstructures . 2018,第OCTa期

机译：基于AlGaN的深紫外发光二极管的p-EBL / p-AlGaN / p-GaN结构的极化效应
2. Performance Enhancement of Blue InGaN Light-Emitting Diodes with P-GaN/InGaN SPS Last Barrier and P-AlGaN/GaN SPS EBL [J] . Wang C. K., Chiou Y. Z., Lin P. K., ECS Journal of Solid State Science and Technology . 2016,第6期

机译：P-GaN / InGaN SPS的最后一个势垒和P-AlGaN / GaN SPS EBL增强了蓝色InGaN发光二极管的性能
3. Fabrication of White Light-Emitting Diodes Based on UV Light-Emitting Diodes with Conjugated Polymers-(CdSe/ZnS) Quantum Dots as Hybrid Phosphors [J] . Hyunchul Jung, Wonkeun Chung, Chang Hun Lee, Journal of nanoscience and nanotechnology . 2012,第7期

机译：基于共轭聚合物-（CdSe / ZnS）量子点作为杂化荧光粉的紫外发光二极管的白光发光二极管的制备
4. Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization [C] . Ahmed Fadil, Yiyu Ou, Daisuke Iida, Conference on Lasers and Electro-Optics . 2016

机译：具有表面等离子体激元相容性金属化的薄p-GaN发光二极管的研究
5. Growth, Fabrication, and Characterization of High Performance Long Wavelength c-plane III-Nitride Light-Emitting Diodes [D] . Alhassan, Abdullah Ibrahim. 2018

机译：高性能长波长C面III-氮化物发光二极管的生长，制造和表征
6. The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence [O] . Mazhar Ali Abbasi, Zafar Hussain Ibupoto, Mushtaque Hussain, 2013

机译：使用具有增强发光的n-ZnO / NiO / p-GaN异质结制造白色发光二极管
7. Fabrication and Characterization of n-ZnO/p-AlGaN Heterojunction Light-Emitting Diodes on 6H-SiC Substrates [O] . Alivov, Y. I., Kalinina, E. V., Cherenkov, A. E., 2012

机译：6H-SiC衬底上n-ZnO / p-AlGaN异质结发光二极管的制备与表征

Fabrication of Hybrid n-ZnMgO-ZnO/p-AlGaN/p-GaN Light-Emitting Diodes

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