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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Host Isotope Effect on the Local Vibration Modes of VH_2 and VOH_2 Defects in Isotopically Enriched ~(28)Si, ~(29)Si and ~(30)Si Single Crystals
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Host Isotope Effect on the Local Vibration Modes of VH_2 and VOH_2 Defects in Isotopically Enriched ~(28)Si, ~(29)Si and ~(30)Si Single Crystals

机译：同位素对〜（28）Si，〜（29）Si和〜（30）Si单晶中VH_2和VOH_2缺陷的局部振动模式的影响

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摘要

Local vibrational modes of a vacancy with two hydrogen atoms (VH_2) and of a vacancy with one oxygen and two-hydrogen atoms (VOH_2) in silicon have been investigated using isotopically enriched ~(28)Si, ~(29)Si, and ~(30)Si single crystals. Infrared absorption spectroscopy revealed shifts in the Si-H stretch frequencies of the two defects when the mass of the silicon host atoms was changed. The observed stretch frequencies can for each defect be accounted for with a simple vibrational model based on two coupled Morse oscillators. The anharmonic contribution to the local vibrational mode frequencies of these two defects is evaluated.
机译：用同位素富集的〜（28）Si，〜（29）Si和〜 （30）Si单晶。红外吸收光谱显示，当改变硅主体原子的质量时，两个缺陷的Si-H拉伸频率发生了变化。对于每个缺陷，可以使用基于两个耦合的莫尔斯振荡器的简单振动模型来解释观察到的拉伸频率。评估了这两个缺陷对局部振动模式频率的非谐贡献。

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