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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Photoelectrochemical Properties of InGaN for H_2 Generation from Aqueous Water
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Photoelectrochemical Properties of InGaN for H_2 Generation from Aqueous Water

机译:InGaN在水中生成H_2的光电化学性能。

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摘要

The photoelectrochemical properties of In_xGa_(1-x)N (x = 0.02 and 0.09) were compared with those of GaN. The band-edge potentials of In_xGa_(1-x)N were determined by the Mott-Schottky plot for the first time. The gas generation from a counterelectrode using the In_(0.02)Ga_(0.91)N working electrode was the highest of the three samples. Band-edge potentials and the light absorption of a working photoelectrode presumably affect the gas generation efficiency.
机译:将In_xGa_(1-x)N(x = 0.02和0.09)的光电化学性质与GaN进行了比较。 In_xGa_(1-x)N的能带边缘电势是由莫特-肖特基曲线首次确定的。在三个样品中,使用In_(0.02)Ga_(0.91)N工作电极从对电极产生的气体最高。带边缘电位和工作光电极的光吸收可能会影响气体产生效率。

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