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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Investigations of δ-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded In_xGa_(1-x)As Channel
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Investigations of δ-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded In_xGa_(1-x)As Channel

机译：具有线性渐变In_xGa_（1-x）As通道的δ掺杂InAlAs / InGaAs / InP高电子迁移率晶体管的研究

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摘要

Comprehensive investigations of the various static and microwave performances of InAlAs/InGaAs/InP high-electron-mobility transistor (HEMT) with a linearly graded In_xGa_(1-x)As channel (LGC-HEMT) have been conducted. LGC-HEEMT was compared with the same HEMT having a conventional lattice-matched In_(0.53)Ga_(0.47)As channel (LM-HEMT). Improved carrier transport characteristics and confinement capability achieved by employing a linearly graded channel have contributed to a high extrinsic transconductance (g_m) of 319 mS/mm, a high unity-gain cutoff frequency (f_t) of 37 GHz, and a maximum oscillation frequency (f_(max)) of 51 GHz at 300 K for a gate length of 0.65 μm. The improved gate-voltage swing, turn-on and output power characteristics of LGC-HEMT have also been discussed.
机译：对具有线性渐变的In_xGa_（1-x）As沟道（LGC-HEMT）的InAlAs / InGaAs / InP高电子迁移率晶体管（HEMT）的各种静态和微波性能进行了全面研究。将LGC-HEEMT与具有常规晶格匹配的In_（0.53）Ga_（0.47）As通道（LM-HEMT）的相同HEMT进行了比较。通过采用线性渐变通道实现的改善的载流子传输特性和约束能力，有助于实现319 mS / mm的高非本征跨导（g_m），37 GHz的高单位增益截止频率（f_t）以及最大振荡频率（栅极长度为0.65μm时，在300 K下为51 GHz的f_（max））。还讨论了LGC-HEMT改善的栅极电压摆幅，导通和输出功率特性。

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