Optimized Coalescence Method for the Metalorganic Chemical Vapor Deposition (MOCVD) Growth of High Quality Al-Polarity AlN Films on Sapphire

Qing Paduano; David Weyburne

首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Optimized Coalescence Method for the Metalorganic Chemical Vapor Deposition (MOCVD) Growth of High Quality Al-Polarity AlN Films on Sapphire

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Optimized Coalescence Method for the Metalorganic Chemical Vapor Deposition (MOCVD) Growth of High Quality Al-Polarity AlN Films on Sapphire

机译：优化的聚结方法用于在蓝宝石上生长高质量Al-Polarity AlN薄膜的金属有机化学气相沉积（MOCVD）

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摘要

Epitaxial Al-polarity AlN films were deposited on (0001) sapphire using a metalorganic chemical vapor deposition process involving a modulated ammonia/trimethyl aluminum flow, a pressure reduction from 150Torr to 40Torr after the first stage of growth, and growing the first ～0.1 μm of AlN at a moderate Ⅴ/Ⅲ ratio, followed by a switch to low Ⅴ/Ⅲ for the remainder of the growth. Smooth, flat epitaxial films with a full width half maximum of the X-ray rocking curves as low as 177 arcseconds/650 arcseconds for the (0002)/(1012) reflections were obtained.

机译：外延Al-极性AlN膜使用金属有机化学气相沉积工艺沉积在（0001）蓝宝石上，该工艺涉及调制的氨/三甲基铝流量，生长的第一阶段后压力从150Torr降低至40Torr，并开始生长约0.1μm在中等的Ⅴ/Ⅲ比例下生长AlN，然后在其余的生长过程中切换到较低的Ⅴ/Ⅲ。获得了光滑的，平坦的外延膜，其对于（0002）/（1012）反射，X射线摇摆曲线的全宽度半最大值低至177弧秒/ 650弧秒。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2005年第7期|p.L150-L152|共3页
作者
Qing Paduano; David Weyburne;
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作者单位

Air Force Research Laboratory, Sensors Directorate, 80 Scott Dr., Hanscom AFB, MA 01731, U.S.A.;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
optimized coalescence; MOCVD; AlN films; Al-polarity; sapphire substrate; X-ray diffraction; optical excitons;

机译：优化结合;MOCVD;AlN膜;Al极性;蓝宝石衬底;X射线衍射;光学激子;

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2. High Quality Al-Polar AlN Growth on (0001) Sapphire Using Polarity-Selective Thermal Etching by High Temperature Metalorganic Chemical Vapor Deposition [J] . Jeon Minhwan, Kim Jinwan, Lee Kyungjae, Journal of nanoscience and nanotechnology . 2015,第11期

机译：高温金属有机化学气相沉积极性选择性热蚀刻在（0001）蓝宝石上生长高质量Al-Polar AlN
3. Evaluation of strain in AlN thin films grown on sapphire and 6H-SiC by metalorganic chemical vapor deposition [J] . Naoto Kato, Takashi Inushima Physica Status Solidi. C, Conferences and critical reviews . 2006,第6期

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5. Electrical characterization of N-type gallium nitride grown by metalorganic vapor deposition (MOCVD) on sapphire. [D] . Chong, Gabel. 2000

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6. High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition [O] . Jiaming Wang, Fujun Xu, Chenguang He, -1

机译：通过金属有机化学气相沉积在氮化蓝宝石上生长的高质量AlN外延层
7. The Growth of AlN Single Layer on Sapphire at Low Pressure using Metalorganic Chemical Vapor Deposition (MOCVD) [O] . M.A.A.Z. Md Sahar, Z. Hassan, W.F. Lim, 2020

机译：使用金属化学气相沉积（MOCVD）在低压下在低压下的Aln单层在蓝宝石上的生长

Optimized Coalescence Method for the Metalorganic Chemical Vapor Deposition (MOCVD) Growth of High Quality Al-Polarity AlN Films on Sapphire

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