Antimony Treatment Effect on Cd_(1-x)Mn_xTe Growth on GaAs by Metal-Organic Vapor Phase Epitaxy

Hideo GOTO; Satomi SAW ADA; Masahiro TAHASHI; Toshiyuki IDO

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Antimony Treatment Effect on Cd_(1-x)Mn_xTe Growth on GaAs by Metal-Organic Vapor Phase Epitaxy

机译：金属有机汽相外延处理锑对GaAs上Cd_（1-x）Mn_xTe生长的影响

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摘要

A heteroepitaxial film of Cd_(1-x)Mn_xTe has been grown on a (100)GaAs substrate by metal-organic vapor phase epitaxy. It is shown that a high quality Cd_(1-x)Mn_xTe film can be grown on the GaAs substrate by pretreating the GaAs substrate with triethyl antimony at 650℃. The best full width at half maximum of the X-ray diffraction peak of the Cd_(1-x)Mn_xTe film (x = 0.12) obtained was 650 arc sec. The effects of the triethyl antimony on the film quality of Cd_(1-x)Mn_xTe are discussed.

机译：通过金属有机气相外延在（100）GaAs衬底上生长了Cd_（1-x）Mn_xTe异质外延膜。结果表明，通过在650℃下用三乙基锑预处理GaAs衬底，可以在GaAs衬底上生长高质量的Cd_（1-x）Mn_xTe薄膜。所获得的Cd_（1-x）Mn_xTe膜（x ＝ 0.12）的X射线衍射峰的最大一半的最佳全宽为650弧秒。讨论了三乙基锑对Cd_（1-x）Mn_xTe薄膜质量的影响。

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来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2005年第1a期|p.147-148|共2页
作者
Hideo GOTO; Satomi SAW ADA; Masahiro TAHASHI; Toshiyuki IDO;
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作者单位

Department of Electrical Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai, Aichi 487-8501, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
MOVPE; CdMnTe; GaAs; antimony;

机译：MOVPE;CdMnTe;GaAs;锑;

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Antimony Treatment Effect on Cd_(1-x)Mn_xTe Growth on GaAs by Metal-Organic Vapor Phase Epitaxy

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