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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Composition and Crystal Phase Control of Chemical-Vapor-Deposited Pb(Zr_x,Ti_(1-x))O_3 Films on Various Oxide Electrodes with Reactants Pb(C_2H_5)_4, Zr(O-t-C_4H_9)_4, Ti(O-i-C_3H_7)_4 and O_2
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Composition and Crystal Phase Control of Chemical-Vapor-Deposited Pb(Zr_x,Ti_(1-x))O_3 Films on Various Oxide Electrodes with Reactants Pb(C_2H_5)_4, Zr(O-t-C_4H_9)_4, Ti(O-i-C_3H_7)_4 and O_2

机译：具有反应物Pb（C_2H_5）_4，Zr（Ot-C_4H_9）_4，Ti（Oi-C_3H_7）的各种氧化物电极上化学气相沉积Pb（Zr_x，Ti_（1-x））O_3膜的组成和晶相控制_4和O_2

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摘要

The film-composition-determining path of lead zirconate titanate chemical vapor deposition (PZT-CVD) in a cold-wall reactor operated at 773 K was studied using Pb(C_2H_5)_4, Zr(O-t-C_4H_9)_4, Ti(O-i-C_3H_7)_4, and O_2 as the reactants. The differences in composition and crystalline properties of PZT films grown on various oxide substrate surfaces under the same reaction conditions revealed that a heterogeneous reaction between Pb(C_2H_5)_4 and O_2 to form PbO as an intermediate plays a decisive role in determining the PZT composition in this multi-component CVD system. To explain these substrate-dependent differences in growth behavior, a reaction model was then developed that utilizes the electronegativity difference of O between the PbO and the oxide substrate as the affinity index for chemisorption of Pb(C_2H_5)_4. This model explains well why PZT grown on IrO_2 (with a strong affinity) tends to be Pb-rich in composition but Pb-deficient on (La,Sr)CoO_3 (with a weak affinity).
机译：研究了使用Pb（C_2H_5）_4，Zr（Ot-C_4H_9）_4，Ti（Oi-）在773 K下运行的冷壁反应器中钛酸锆酸铅化学气相沉积（PZT-CVD）的决定膜组成的路径C_3H_7）_4和O_2作为反应物。在相同反应条件下在各种氧化物衬底表面上生长的PZT膜的组成和晶体性质的差异表明，Pb（C_2H_5）_4与O_2之间的异质反应形成PbO作为中间体在决定PZT组成中起决定性作用。这种多组分CVD系统。为了解释这些依赖于底物的生长行为差异，然后建立了一个反应模型，该模型利用PbO和氧化物底物之间的O的电负性差异作为化学吸附Pb（C_2H_5）_4的亲和力指数。该模型很好地解释了为什么在IrO_2（具有强亲和力）上生长的PZT的成分往往富含Pb，而在（La，Sr）CoO_3（具有弱亲和力）上却缺乏Pb。

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