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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters >Progress in the Efficiency of Wide-Gap Cu(In_(1-x)Ga_x)Se_2 Solar Cells Using CIGSe Layers Grown in Water Vapor
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Progress in the Efficiency of Wide-Gap Cu(In_(1-x)Ga_x)Se_2 Solar Cells Using CIGSe Layers Grown in Water Vapor

机译：利用水蒸气中生长的CIGSe层实现宽间隙Cu（In_（1-x）Ga_x）Se_2太阳能电池效率的进展

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摘要

Progress in the performance of wide-gap Cu(In_(1-x)Ga_x)Se_2 (CIGSe) solar cells for x values around 0.5 has been demonstrated using CIGSe layers grown in the presence of water vapor. While CIGSe thin films deposited in the presence of water vapor showed variations in electrical properties such as increases in hole carrier density and a consequent enhancement of p-type conductivity, no significant changes in the morphology and growth orientation were observed. Both the open circuit voltages and current densities of the CIGSe solar cells were improved using CIGSe layers grown in water vapor. An 18.1 %-efficient cell with an open circuit voltage of 0.744 V, a current density of 32.4 mA/cm~2 and a fill factor of 0.752 was fabricated from a 1.3eV-CIGSe (x ～ 0.48) layer.
机译：使用在水蒸气存在下生长的CIGSe层，已经证明了x值约为0.5的宽间隙Cu（In_（1-x）Ga_x）Se_2（CIGSe）太阳能电池性能的进步。尽管在水蒸气存在下沉积的CIGSe薄膜显示出电性能的变化，例如空穴载流子密度的增加和随之而来的p型电导率的提高，但没有观察到形态和生长方向的显着变化。使用在水蒸气中生长的CIGSe层，可以提高CIGSe太阳能电池的开路电压和电流密度。由1.3eV-CIGSe（x〜0.48）层制成了开孔电压为0.744 V，电流密度为32.4 mA / cm〜2和填充系数为0.752的电池，效率为18.1％。

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