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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Characteristics of Charging Effect in One-Dimensional Array of Bi_2Sr_2CaCu_2O_(8+δ) Intrinsic Josephson Junctions
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Characteristics of Charging Effect in One-Dimensional Array of Bi_2Sr_2CaCu_2O_(8+δ) Intrinsic Josephson Junctions

机译：Bi_2Sr_2CaCu_2O_（8 +δ）本征约瑟夫森结的一维阵列中的充电效应特性

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摘要

For the observation of the charging effect on a Josephson junction, the charging energy (E_c) must be much larger than the Josephson coupling energy (E_J) and thermal energy (k_BT). We investigated the properties of submicron-sized Bi_2Sr_2CaCu_2O_(8+δ) intrinsic Josephson junctions (IJJs) at low temperature. The current-voltage curve of IJJs with a junction area of 0.06 μm~2 showed a much higher resistance state near the zero bias voltage regions when the measurement temperature decreased to 72.6 mK. The ratios of E_c/E_J and E_c/k_BT were 7.04 and 5.78, respectively, which indicates that the charging effect is dominant. In addition, a characteristic voltage structure due to the charging effect in one-dimensional junction array, which is composed of the offset voltage and the threshold voltage of the junction, was observed.
机译：为了观察约瑟夫森结上的充电效应，充电能量（E_c）必须比约瑟夫森耦合能（E_J）和热能（k_BT）大得多。我们研究了亚微米尺寸的Bi_2Sr_2CaCu_2O_（8 +δ）固有约瑟夫森结（IJJs）在低温下的性质。当测量温度降至72.6 mK时，结区为0.06μm〜2的IJJs的电流-电压曲线在零偏置电压区域附近呈现出更高的电阻状态。 E_c / E_J和E_c / k_BT的比分别为7.04和5.78，这表明充电效应是主要的。另外，观察到由一维结阵列中的充电效应引起的特征电压结构，该结构由结电压和结的阈值电压组成。

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