Ga Adlayer Governed Surface Defect Evolution of (0001)GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy

Gregor KOBLMUELLER; Jay BROWN; Robert AVERBECK; Henning RIECHERT; Peter PONGRATZ; James S. SPECK

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Ga Adlayer Governed Surface Defect Evolution of (0001)GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy

机译：等离子体辅助分子束外延生长Ga层控制的（0001）GaN薄膜的表面缺陷演变

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The impact of the Ga adlayer coverage onto the surface morphologies and pit densities of GaN (0001) films grown by plasma-assisted molecular beam epitaxy (PAMBE) has been studied using quantitative in situ quadrupole mass spectrometry (QMS). As the equilibrium Ga adlayer coverages rise continuously from 0 to 2.5 monolayers (ML) the surface pit densities decrease from ～2 x 10~9 cm~(-2) to zero, yielding characteristic step-flow and spiral growth hillock features. These results show that there is a direct and quantitative link between Ga adlayer coverage, adatom diffusion and surface defect structure without any discontinuities.

机译：使用定量原位四极杆质谱（QMS）研究了Ga覆盖层覆盖对通过等离子体辅助分子束外延（PAMBE）生长的GaN（0001）薄膜的表面形态和凹坑密度的影响。随着平衡Ga覆盖层的覆盖范围从0到2.5单层（ML）不断增加，表面凹坑密度从〜2 x 10〜9 cm〜（-2）减小到零，从而产生特征性的阶跃流和螺旋形生长丘陵特征。这些结果表明，Ga的附加层覆盖，原子扩散与表面缺陷结构之间存在直接而定量的联系，而没有任何不连续性。

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《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2005年第32期|p.L906-L908|共3页
作者
Gregor KOBLMUELLER; Jay BROWN; Robert AVERBECK; Henning RIECHERT; Peter PONGRATZ; James S. SPECK;
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作者单位

Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
GaN; Ga adlayer coverage; PAMBE growth; quadrupole mass spectrometry; surface defects; morphology;

机译：GaN;Ga覆盖层;PAMBE生长;四极质谱;表面缺陷;形貌;

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专利

1. Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN [J] . G. Koblmueller, J. Brown, R. Averbeck, Applied Physics Letters . 2005,第4期

机译：（0001）GaN的等离子体辅助分子束外延过程中Ga覆盖层的连续演化
2. Extenuation of Stress and Defects in GaN Films Grown on a Metal-Organic Chemical Vapor Deposition-GaN/c-Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy [J] . Aggarwal Neha, Krishna Shibin T. C., Goswami Lalit, Crystal growth & design . 2015,第5期

机译：等离子体辅助分子束外延在金属有机化学气相沉积-GaN / c-蓝宝石衬底上生长的GaN薄膜中的应力和缺陷的衰减
3. Investigation on the ZnO:N films grown on (0001) and (0001) ZnO templates by plasma-assisted molecular beam epitaxy [J] . S.H. Park, J.H. Chang, T. Minegishi, Journal of Crystal Growth . 2009,第7期

机译：等离子体辅助分子束外延研究在（0001）和（0001）ZnO模板上生长的ZnO：N膜
4. Nucleation and Stoichiometry Dependence of rutile-TiO_2(001)/GaN(0001) Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy [C] . Costel Constantin, Kai Sun, R. M. Feenstra Symposium A on Performance and Reliability of Semiconductor Devices . 2009

机译：通过等离子体辅助分子束外延生长的金刚石-TiO_2（001）/ GaN（0001）薄膜的核心和化学计量依赖性
5. Structure, morphology, and kinetics of GaN film growth using gas-source and RF plasma-assisted metal-organic molecular beam epitaxy [D] . Woll, Arthur Randall 2000

机译：使用气体源和RF等离子体辅助金属 - 有机分子束外延对GaN薄膜生长的结构，形态和动力学
6. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy [O] . Ing-Song Yu, Chun-Pu Chang, Chung-Pei Yang, 2014

机译：等离子体辅助分子束外延通过液滴外延对Si（111）上的GaN纳米点进行表征和密度控制
7. Properties of GaN epitaxial layers grown on 6HSiC( 0001) by plasma-assisted molecular beam epitaxy [O] . Lee C. D., Ramachandran V., Sagar Ashutosh, 2001

机译：等离子体辅助分子束外延在6HSiC（0001）上生长的GaN外延层的性能

Ga Adlayer Governed Surface Defect Evolution of (0001)GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy

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