Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers

Atsushi FUJIWARA; Toshikazu MUKAI; Takeshi MATSUMOTO; Shigehiko HASEGAWA; Hajime ASAHI

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Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers

机译：具有InGaP包覆层的TlInGaAs / GaAs双量子阱二极管中的电流注入激光振荡

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摘要

TlInGaAsN/AlGaAs heterostructures were proposed for use in the fabrication of temperature-stable lasing wavelength and threshold current laser diodes. As a first step, we grew TlInGaAs/GaAs quantum well (QW) structures on GaAs(100) substrates and demonstrated an electroluminescence (EL) emission of up to 300 K. Compared with InGaAs/GaAs QWs, we confirmed that the temperature variation of the EL peak energy was decreased by the addition of Tl into InGaAs. We also demonstrated the pulsed current injection laser oscillation in the TlInGaAs/GaAs double QW laser diodes with InGaP cladding layers up to 176 K.

机译：提出了TiInGaAsN / AlGaAs异质结构用于制造温度稳定的激射波长和阈值电流激光二极管。第一步，我们在GaAs（100）衬底上生长了TlInGaAs / GaAs量子阱（QW）结构，并证明了高达300 K的电致发光（EL）发射。与InGaAs / GaAs QWs相比，我们确认了温度变化通过向InGaAs中添加T1来降低EL峰值能量。我们还展示了在InGaP包层高达176 K的TlInGaAs / GaAs双QW激光二极管中的脉冲电流注入激光振荡。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2005年第32期|p.L1002-L1004|共3页
作者
Atsushi FUJIWARA; Toshikazu MUKAI; Takeshi MATSUMOTO; Shigehiko HASEGAWA; Hajime ASAHI;
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作者单位

The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
TlInGaAs; GaAs; semiconductor laser diodes; temperature-insensitive wavelength; molecular beam epitaxy; WDM optical fiber communication;

机译：TlInGaAs;GaAs;半导体激光二极管;对温度不敏感的波长;分子束外延;WDM光纤通信;

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专利

1. Low threshold current density 1.3μm InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy [J] . F.Y. Chang, J.D. Lee, H.H. Lin Electronics Letters . 2004,第3期

机译：气体源分子束外延生长具有InGaP包覆层的低阈值电流密度1.3μmInAs / InGaAs量子点激光器
2. High temperature, high power InGaAs/GaAs quantum-well lasers with lattice-matched InGaP cladding layers [J] . Wu M.C., Chen Y.K. IEEE Photonics Technology Letters . 1992,第7期

机译：具有晶格匹配InGaP包层的高温，高功率InGaAs / GaAs量子阱激光器
3. 1.3 mu m InGaAs/GaAs strained quantum well lasers with InGaP cladding layer [J] . Uchida T., Kurakake H. Electronics Letters . 1994,第7期

机译：具有InGaP覆层的1.3μmInGaAs / GaAs应变量子阱激光器
4. High T/sub 0/ 1.3 /spl mu/m InGaAs strained single quantum well laser with InGaP wide band-gap clad layers [C] . Kurakake, H., Uchida, . 1994

机译：具有InGaP宽带隙包覆层的高T / sub 0 / 1.3 / spl mu / m InGaAs应变单量子阱激光器
5. Fabrication of high power aluminum: Free 0.8 micron to 1.0 micron InGaAsP/InGaP/GaAs lasers for optical pumping [D] . Diaz, Jacqueline Estela 1997

机译：高功率铝的制造：用于光学泵浦的0.8微米至1.0微米的InGaAsP / InGaP / GaAs激光器
6. Optical gain in GaAsBi/GaAs quantum well diode lasers [O] . Igor P. Marko, Christopher A. Broderick, Shirong Jin, -1

机译：GaAsBi / GaAs量子阱二极管激光器中的光学增益
7. Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates [O] . Bhattacharya, Arnab, Mawst, Luke J., Nayak, Sabyasachi, 1996

机译：在Gaas衬底上通过金属有机化学气相沉积生长的InGaas / InGaasp / InGap量子阱激光二极管的界面结构
8. Double-Heterostructure Diode Lasers Emitting at 3 Micrometers with a MetastableGaInAsSb Active Layer and AlGaAsSb Cladding Layers [R] . Choi, H. K., Eglash, S. J., Turner, G. W. 1994

机译：具有亚稳态GaInassb有源层和alGaassb包层的3倍微米发射双异质结构二极管激光器

Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers

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