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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Defect Structures of AlN on Sapphire (0001) Grown by Metalorganic Vapor-Phase Epitaxy with Different Preflow Sources
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Defect Structures of AlN on Sapphire (0001) Grown by Metalorganic Vapor-Phase Epitaxy with Different Preflow Sources

机译：不同预流源的金属有机气相外延生长的蓝宝石（0001）上AlN的缺陷结构

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摘要

Two types of AlN defect structures directly grown on sapphire (0001) by metalorganic vapor-phase epitaxy with different initial growth sequences were studied. One was a domain structure with arrays of threading edge dislocations aligned along the [1-210] direction, observed in AlN with NH_3 preflow. The other was threading dislocations with screw components located randomly, observed in AlN with TMA preflow. It was also confirmed that threading dislocations caused the surface depression of AlN. A model for the formation of domain structures based on the geometrical aspects and dislocation types is proposed.
机译：研究了通过有机金属气相外延直接生长在蓝宝石（0001）上的两种AlN缺陷结构，其初始生长顺序不同。一种是在具有NH_3预流的AlN中观察到的具有沿[1-210]方向排列的螺纹边缘位错阵列的畴结构。另一个是在TMA预流的AlN中观察到的螺纹错位和随机定位的螺丝组件。还证实了螺纹位错引起AlN的表面凹陷。提出了一种基于几何特征和位错类型的畴结构形成模型。

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