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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Growth Control of Carbon Nanotube using Various Applied Electric Fields for Electronic Device Applications
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Growth Control of Carbon Nanotube using Various Applied Electric Fields for Electronic Device Applications

机译:电子器件应用中使用各种施加电场的碳纳米管生长控制

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The control of the growth direction of a carbon nanotube was accomplished by applying an electric field during the growth of the carbon nanotube. The effects of two types of applied bias, one is a constant DC bias, and the other is a ramp bias, on the control of the growth direction were examined. By maintaining a constant DC bias we could control the growth direction of the carbon nanotube, however, the bridging ratio between the two electrodes was as small as 35%. We suppose that this low bridging ratio may be caused by the etching effect of hydrogen. When a ramp bias was applied, bridging ratio tended to increase with the slope of ramp bias. Under optimal conditions, the bridging ratio reached a value as high as 95%.
机译:通过在碳纳米管的生长期间施加电场来实现对碳纳米管的生长方向的控制。研究了两种施加的偏压对生长方向控制的影响,一种是恒定的直流偏压,另一种是斜坡偏压。通过保持恒定的DC偏压,我们可以控制碳纳米管的生长方向,但是,两个电极之间的桥接率只有35%。我们认为这种低的桥接率可能是由氢的蚀刻作用引起的。当施加斜率偏置时,桥接率倾向于随斜率偏置的斜率而增加。在最佳条件下,桥接率高达95%。

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