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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Coulomb and Phonon Scattering Processes in Metal-Oxide-Semiconductor Inversion Layers: Beyond Matthiessen's Rule
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Coulomb and Phonon Scattering Processes in Metal-Oxide-Semiconductor Inversion Layers: Beyond Matthiessen's Rule

机译：金属氧化物半导体反型层中的库仑和声子散射过程：超越马蒂森法则

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摘要

The separability of Coulomb and phonon scattering processes in inversion layers of metal-oxide-semiconductor field-effect-transistors (MOSFETs) was studied. The effect of finite collisional duration due to phonon scattering was considered in the evaluation of Coulomb scattering-limited mobility to investigate the relationship between the separability of Coulomb and phonon scattering processes and the long-range nature of Coulomb potential. It was found that the condition under which Coulomb scattering is separated from phonon scattering is determined by the relationship between the screening length due to free carriers in the inversion layers and the phonon mean free path. It was also found that the long-range component of the Coulomb potential is effectively cut off by phonon scattering.
机译：研究了金属氧化物半导体场效应晶体管（MOSFET）的反型层中库仑和声子散射过程的可分离性。为了评估库仑散射和声子散射过程的可分离性与库仑势的远距离特性之间的关系，在库仑散射极限迁移率的评估中考虑了声子散射引起的有限碰撞持续时间的影响。已经发现，库仑散射与声子散射分离的条件是由反型层中自由载流子的屏蔽长度与声子平均自由程之间的关系所决定的。还发现库仑势的远距离分量被声子散射有效地切断。

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