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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Electronic Structures and Carrier Correlation in Single Pair of Coupled Quantum Dots
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Electronic Structures and Carrier Correlation in Single Pair of Coupled Quantum Dots

机译：单对耦合量子点中的电子结构和载流子相关

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The electronic structures and carrier correlation in a single pair of InAs/GaAs coupled quantum dots (QDs) are investigated by performing photoluminescence (PL), one-color photoluminescence excitation (PLE) and two-color PLE measurements. Luminescence from the bonding (X~+) and anti-bonding (X~-) states due to the wave function coupling was observed in the micro-PL (μ-PL) spectra of the coupled QDs. One-color PLE spectra reveal the electronic structures of the coupled QD system in which there is the coexistence of both common excited level series between the X~+ and X~- states and individual excited level series for each state. In two-color PLE measurement, the suppression of PLE peak intensity at the energy separation of the longitudinal optical (LO) phonon suggests a carrier correlation through the screening effect of the carrier-LO-phonon interaction in the coupled QD system. Additionally, we demonstrate the control of the energy state in the coupled QDs using two-color excitations.
机译：通过执行光致发光（PL），一种颜色的光致发光激发（PLE）和两种颜色的PLE测量，研究了一对InAs / GaAs耦合量子点（QD）中的电子结构和载流子相关性。在耦合QD的micro-PL（μ-PL）光谱中观察到由于波函数耦合导致的键合（X〜+）和反键合（X〜-）状态的发光。单色PLE光谱揭示了耦合QD系统的电子结构，其中X〜+和X〜-状态之间的共同激发能级系列与每个状态的单独激发能级系列并存。在双色PLE测量中，在纵向光学（LO）声子的能量分离处对PLE峰强度的抑制表明，通过耦合QD系统中载流子-LO-声子相互作用的屏蔽效应，载流子相关。此外，我们演示了使用双色激发对耦合量子点中能量状态的控制。

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