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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Enhancement of Adhesion Strength of Electroless-Plated Ni Under Bump Metallurgy by Introduction of Inductively Coupled Plasma Enhanced Bias Sputtering Ni Seed Layer
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Enhancement of Adhesion Strength of Electroless-Plated Ni Under Bump Metallurgy by Introduction of Inductively Coupled Plasma Enhanced Bias Sputtering Ni Seed Layer

机译：引入电感耦合等离子体增强偏压溅射镍籽晶层提高了化学镀镍在凸块冶金下的结合强度

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摘要

Electroless Ni plating using zincate treatment on Al pad is the most popular under bump metallurgy (UBM) fabrication method because of its low process cost. However, it has a demerit of poor adhesion strength. In this study, instead of using conventional zincate treatment, Ni thin film was used as a seed layer for the fabrication of Ni UBM film using electroless plating. 60-nm-thick Ni seed layer was deposited by inductively coupled plasma enhanced bias sputtering (ICPBS). The bombardment of energetic ions causes the compressive stress in the Ni seed layer and the atomic mixing at the interface. The introduction of Ti buffer layer successfully keeps the Ni seed layer from swelling due to the hydrogen generated by reducing agent in the electroless plating solution. The adoption of Ni seed layer deposited by ICPBS method enables the fabrication of electroless-plated Ni UBM film with maximum of 20 times superb adhesion strength measured by scratch test compared to that fabricated by conventional technique.
机译：在凸块冶金（UBM）的制造方法中，在铝焊盘上进行锌盐处理的化学镀镍是最流行的方法，因为它的处理成本较低。然而，其缺点是粘合强度差。在这项研究中，代替使用常规的锌酸盐处理，将Ni薄膜用作通过化学镀制备Ni UBM膜的籽晶层。通过电感耦合等离子体增强偏压溅射（ICPBS）沉积60 nm厚的Ni籽晶层。高能离子的轰击导致Ni种子层中的压缩应力和界面处的原子混合。 Ti缓冲层的引入成功地防止了镍籽晶层因在化学镀溶液中还原剂产生的氢而膨胀。与传统技术相比，采用通过ICPBS方法沉积的Ni籽晶层可以制造化学镀的Ni UBM膜，其最大的20倍的超强附着力（通过划痕试验测得）。

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