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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Mechanical Stress Caused by Adsorption of O or N on Ga-terminated (100) GaAs Surface and InAl-terminated (100) InAlAs Surface: Degradation of Insulator/Semiconductor Interface
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Mechanical Stress Caused by Adsorption of O or N on Ga-terminated (100) GaAs Surface and InAl-terminated (100) InAlAs Surface: Degradation of Insulator/Semiconductor Interface

机译：由O或N吸附在Ga终止的（100）GaAs表面和InAl终止的（100）InAlAs表面上引起的机械应力：绝缘体/半导体界面的降解

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摘要

Mechanical stress at the surfaces of GaAs and InAlAs, caused by adsorption of O or N on their group Ⅲ surfaces, was calculated using small cluster models and first-principles calculations. These elements adsorb at the bridge sites and give strong compressive stress to the crystal. Assuming that only the O and N at the interface generate the stress, i.e., the insulator does not give any stress, mechanical stress at the insulator/semiconductor interface were calculated. N at the insulator/GaAs interface does not give a strong stress, but O does. Calculation results were compared with various experimental results. The results do not contradict any of the examined experimental findings, and these findings are reasonably understandable when one takes the mechanical stress as a cause of the interface degradation.
机译：利用小聚类模型和第一性原理计算了由O或N吸附在它们的Ⅲ组表面上引起的GaAs和InAlAs表面的机械应力。这些元素吸附在桥的位置，并向晶体施加强大的压缩应力。假设仅在界面处的O和N产生应力，即，绝缘体不施加任何应力，则计算出在绝缘体/半导体界面处的机械应力。绝缘体/ GaAs界面处的N不会产生强应力，但是O会产生强应力。将计算结果与各种实验结果进行了比较。结果与任何已检查的实验结果均不矛盾，并且当人们将机械应力视为界面退化的原因时，这些发现是可以合理理解的。

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