...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Impact of Aggressively Shallow Source/Drain Extensions on Device Performance
【24h】

Impact of Aggressively Shallow Source/Drain Extensions on Device Performance

机译：过度浅的源极/漏极扩展对设备性能的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We investigated by numerical simulations the effect of aggressive reduction of the source/drain extension (SDE) depth X, on the performance of a metal-oxide-semiconductor field-effect transistor (MOSFET) of the 45-nm technology node. As an extreme case, the charge-transfer-doped SDE MOSFET (CTE-MOS), which has inversion-layer SDEs induced by surface charges, was considered. Assuming that the gate length L_g fluctuation was ±20%, the substrate doping was set so that the off-state current was a specified value at L_g = -20%, and the resulting drive current I_(on) at L_g = +20% was evaluated. When X_j was reduced from 9.5 to 2.0 nm under a fixed impurity density of 2 x 10~(20) cm~(-3), I_(on) increased by ～27% because the SDF, resistance increase was compensated for by the reduction of the short-channel effects. CTE-MOS exhibited a still better performance: 1-1.3 times I_(on) and 1.1-1.4 times the reciprocal intrinsic delay at L_g = +20% with 1.5-2.5 times the gate oxide thickness compared with the conventional MOSFETs with X_j = 9.5 nm. The feasibility of the CTE was experimentally demonstrated by the formation of electron inversion layers induced with Cs ions implanted into thermal oxide.
机译：我们通过数值模拟研究了源/漏扩展（SDE）深度X的主动减小对45纳米技术节点的金属氧化物半导体场效应晶体管（MOSFET）的性能的影响。在极端情况下，考虑了电荷转移掺杂的SDE MOSFET（CTE-MOS），其具有由表面电荷诱导的反转层SDE。假设栅极长度L_g波动为±20％，设置衬底掺杂，以使截止状态电流在L_g = -20％时为指定值，并且在L_g = + 20％时得到的驱动电流I_（on）被评估。当X_j在2 x 10〜（20）cm〜（-3）的固定杂质密度下从9.5 nm减小到2.0 nm时，由于SDF，I_（on）增加了约27％，电阻的增加被减少了补偿短通道效应。 CTE-MOS表现出更好的性能：与X_j = 9.5的传统MOSFET相比，L_g = + 20％时互为本征延迟的1-1.3倍I_（on）和互逆本征延迟的1.1-1.4倍，栅氧化层厚度为1.5-2.5倍纳米通过用注入热氧化物中的Cs离子诱导的电子反型层的形成，实验证明了CTE的可行性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号