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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >InAs Nano-Dot Array Formation Using Nano-Jet Probe for Photonics Applications
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InAs Nano-Dot Array Formation Using Nano-Jet Probe for Photonics Applications

机译：使用纳米喷射探针的InAs纳米点阵列形成，用于光子学应用

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摘要

We propose herein a new nano-probe-assisted technique that enables the formation of site-controlled InAs quantum dots. High-density two-dimensional indium (In) nano-dot arrays on a GaAs substrate were fabricated using a specially designed atomic-force-microscope probe, referred to as the Nano-Jet Probe. This probe has a hollow pyramidal tip with a submicron-sized aperture at the apex and an In-reservoir tank within the stylus. A voltage pulse was applied between the pyramidal tip and the sample to extract In clusters from the reservoir tank within the stylus through the aperture, resulting in In nano-dot formation. These In nano-dots were converted directly into InAs arrays by the subsequent annealing with irradiation of arsenic flux. The proposed technique has potential applications in photonics, including regular arrays of quantum bits and single photon emitters for quantum computers and quantum communications.
机译：我们在本文中提出了一种新的纳米探针辅助技术，该技术能够形成位置控制的InAs量子点。使用专门设计的原子力显微镜探针（称为Nano-Jet探针），在GaAs衬底上制造了高密度二维铟（In）纳米点阵列。该探针具有空心的锥形尖端，尖端具有亚微米尺寸的孔，并且在探针内有储油罐。在锥体尖端和样品之间施加电压脉冲，以通过孔从触控笔内的储罐中提取In簇，从而形成In纳米点。通过随后的砷通量退火将这些In纳米点直接转换为InAs阵列。所提出的技术在光子学中具有潜在的应用，包括量子位的规则阵列和用于量子计算机和量子通信的单个光子发射器。

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