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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Defect-Induced Charge Freezing on Epitaxial Fe_3O_4 (001) Film Surfaces Studied by Spin-Polarized Scanning Tunneling Microscopy
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Defect-Induced Charge Freezing on Epitaxial Fe_3O_4 (001) Film Surfaces Studied by Spin-Polarized Scanning Tunneling Microscopy

机译：自旋极化扫描隧道显微镜研究外延Fe_3O_4（001）薄膜表面上的缺陷诱导电荷冻结

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摘要

We report the role of atom defects on the charge freezing of Fe_3O_4(001) surfaces studied by spin-polarized scanning tunneling microscopy (SP-STM) using a Ni tip. Epitaxially grown Fe_3O_4(001) films on a MgO(001) substrate were used as samples. Atomically flat surfaces are obtained by annealing in an ultrahigh vacuum and in oxygen. The surfaces exhibit a (2~(1/2) x 2~(1/2))R45° reconstruction as revealed by STM with a W tip. STM images indicate surface termination at B-sites. An atomic structure with a 0.3 nm periodicity is observed within the cation rows that are aligned along the [110] direction. SP-STM images show a pronouncedly different periodicity of 1.2 nm on areas having surface defects such as cation vacancies. This corrugation with a 1.2 nm periodicity can be attributed to a charge localization of Fe~(3+) and Fe~(2+) ions that are trapped by cation vacancies and then isolated from the electron hopping process. The results also indicate the important role of oxygen vacancies in modifying the 1.2 nm periodicity.
机译：我们报告原子缺陷在Fe_3O_4（001）表面电荷冻结上的作用，该表面通过使用Ni尖端的自旋极化扫描隧道显微镜（SP-STM）研究。在MgO（001）衬底上外延生长的Fe_3O_4（001）薄膜用作样品。通过在超高真空和氧气中退火获得原子平坦的表面。表面显示出（2〜（1/2）x 2〜（1/2））R45°重建，如STM所示。 STM图像指示B处的表面终止。在沿着[110]方向排列的阳离子行中观察到周期性为0.3 nm的原子结构。 SP-STM图像在具有表面缺陷（例如阳离子空位）的区域显示1.2 nm的明显不同的周期性。这种具有1.2 nm周期性的波纹可以归因于Fe〜（3+）和Fe〜（2+）离子的电荷局部化，这些离子被阳离子空位捕获，然后从电子跳跃过程中分离出来。结果还表明氧空位在改变1.2 nm周期性中的重要作用。

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