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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Application of a Scanning Thermal Nano-Probe for Thermal Imaging of High Frequency Active devices
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Application of a Scanning Thermal Nano-Probe for Thermal Imaging of High Frequency Active devices

机译:扫描热纳米探针在高频有源器件热成像中的应用

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摘要

The first application of a new thermal nano-probe based on the changes of electrical resistivity of a nanometer-sized filament with temperature has been presented for the thermal imaging of microwave power active devices. The integration of the filament the fabrication process of the novel thermal probe with a spatial resolution better than 80 nm and a thermal resolution of the order of 10~(-2) K have already been presented in reference [J. Microelectron. Eng. 57-58 (2001) 737]. To demonstrate the capability of the novel thermal nano-probe the measurements have been successfully performed on a 30 fingers GaAs metal-semiconductor field-effect transistor (GaAs-MESFET) with a maximum power dissipation of 2.5 W. The bias circuit has been designed to suppress the undesired microwave oscillations in the transistor. In this case the power dissipation is equal to the dc power input. The near-field measurements using the nano-probe are compared with infrared measurement and three-dimensional finite element static thermal simulations. The good agreement between simulations and measurements confirms the high capability of the nono-probe for these applications.
机译:提出了一种基于纳米尺寸灯丝电阻率随温度变化的新型热纳米探针在微波功率有源器件热成像中的首次应用。在参考文献中已经提出了灯丝的集成,新颖的热探针的制造过程,该热探针的空间分辨率优于80nm,并且热分辨率为10〜(-2)K。微电子。 。 57-58(2001)737]。为了证明新型热纳米探针的能力,已在30指的砷化镓金属半导体场效应晶体管(GaAs-MESFET)上成功进行了测量,最大功耗为2.5W。抑制晶体管中不需要的微波振荡。在这种情况下,功耗等于直流电源输入。将使用纳米探针的近场测量与红外测量和三维有限元静态热模拟进行比较。模拟和测量之间的良好一致性证明了非探针在这些应用中的高性能。

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