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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Optimization and Properties of Zn Doped Indium Oxide Films on Plastic Substrate
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Optimization and Properties of Zn Doped Indium Oxide Films on Plastic Substrate

机译：塑料基板上Zn掺杂氧化铟薄膜的优化与性能

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摘要

In this report, optimization of the Zn content in Zn doped indium oxide (IZO) films deposited on plastic substrates at low temperature (20℃) was investigated in relation to variation of the Zn content from 0 to 15.9 at%. In the series of IZO films, 12.2at% Zn doped indium oxide films, (IZO(12.2)), showed the lowest resistivity (2.9xl0~(-4) Ωcm). The resistivity of IZO(12.2) films deposited on 100-μm- thick polycarbonate foil was approximately one half of that of ITO films (6xl0~(-4) Ωcm) deposited under comparable conditions. IZO(12.2) films exhibited the lowest resistivity, high transmittance of over 85%, a rapid etching rate and good alkaline durability. The reason for rapid etching rate originates from the amorphous structure of IZO films. The thermal property of IZO(12.2) evaluated by a differential scanning calorimeter (DSC) clarified that the phase transformation from amorphous to crystalline began at 350℃, which meant the structure of IZO(12.2) remained amorphous for a practical temperature of the plastic substrate. Optical gap and Hall measurements revealed that the carrier density was decreased after annealing, whereas, the mobility was increased in relation to a trade off with the carrier density.
机译：在本报告中，研究了在低温（20℃）下沉积在塑料基板上的Zn掺杂的氧化铟（IZO）膜中Zn含量的优化与Zn含量从0到15.9 at％的变化有关。在一系列IZO膜中，12.2at％Zn掺杂的氧化铟膜（IZO（12.2））表现出最低的电阻率（2.9x10〜（-4）Ωcm）。在可比较的条件下，沉积在100-μm厚的聚碳酸酯箔上的IZO（12.2）膜的电阻率约为ITO膜（6x10〜（-4）Ωcm）的电阻率的一半。 IZO（12.2）膜表现出最低的电阻率，超过85％的高透射率，快速的蚀刻速率和良好的碱性耐久性。快速蚀刻速率的原因源于IZO膜的非晶结构。通过差示扫描量热仪（DSC）评估的IZO（12.2）的热性质表明，从非晶态到结晶态的相变始于350℃，这意味着IZO（12.2）的结构在塑料基板的实际温度下仍保持非晶态。光学间隙和霍尔测量结果表明，退火后载流子密度降低，而相对于载流子密度的折衷，迁移率增加。

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