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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >0.12 μm Gate Length T-Shaped AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Fabricated Using a Plasma-Enhanced Chemical Vapor Deposited Silicon-Nitride-Assisted Process
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0.12 μm Gate Length T-Shaped AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Fabricated Using a Plasma-Enhanced Chemical Vapor Deposited Silicon-Nitride-Assisted Process

机译：使用等离子体增强化学气相沉积氮化硅辅助工艺制造的0.12μm栅极长度T形T型AlGaAs / InGaAs / GaAs拟态高电子迁移率晶体管

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A plasma-enhanced chemical vapor deposited (PECVD) silicon-nitride-assisted process has been used to fabricate 0.12 μm T-shaped AlGaAs/InGaAs/GaAs PHEMTs. A two-step SiN_x etch was performed to define the T-gate footprint. The SiN_x was etched either by dry etching alone or using a combination of wet and dry etching. A structure for the top of the T-gate which consists of a wide head part and a narrow lower layer part has been employed, taking advantage of the large cross-sectional area of the gate and its mechanically stable structure. The gate recessing was carried out in two steps including a wet etching for removal of the damaged surface layer and a dry etching for the narrow recess. The cut-off frequency of the device fabricated by the two-step etch process is higher than that of the device fabricated by dry etching alone. We have observed the increase of the cut-off frequency f_T and the maximum oscillation frequency f_(max), by 39% and 16%, respectively. This is believed to be due to considerable decreases of the gate-source and gate-drain capacitances, by 25% and 18.3%, respectively. This improvement in RF performance can be understood in terms of the decrease in parasitic capacitances which is due to the use of the dielectric and the gate recess etching method. The minimum noise figure is 1.6 dB, with a 6.9 dB associated gain at 39 GHz.
机译：等离子体增强化学气相沉积（PECVD）氮化硅辅助工艺已用于制造0.12μmT形AlGaAs / InGaAs / GaAs PHEMT。进行了两步SiN_x蚀刻以定义T栅极的占位面积。通过单独的干法蚀刻或使用湿法和干法蚀刻的组合来蚀刻SiN_x。利用了由宽的头部和狭窄的下层部分组成的T型闸门的顶部的结构，它利用了闸门的大横截面及其机械稳定的结构。栅极凹进分为两个步骤进行，包括用于去除损坏的表面层的湿法刻蚀和用于狭窄凹口的干法刻蚀。通过两步蚀刻工艺制造的器件的截止频率高于仅通过干法蚀刻制造的器件的截止频率。我们已经观察到截止频率f_T和最大振荡频率f_（max）分别增加了39％和16％。据信这是由于栅极-源极和栅极-漏极电容分别大幅降低了25％和18.3％。可以根据寄生电容的减少来理解RF性能的这种改善，这是由于使用了电介质和栅极凹槽蚀刻方法而引起的。最小噪声系数为1.6 dB，在39 GHz时具有6.9 dB的相关增益。

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