Enhancement of the Stability of Capacitance—Voltage Characteristics of Hg_(1-x)Zn_xTe—Based Metal-Insulator-Semiconductor Capacitors by Voltage Annealing

Young-Hun Kim; Sung-Hoon Kim

首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Enhancement of the Stability of Capacitance—Voltage Characteristics of Hg_(1-x)Zn_xTe—Based Metal-Insulator-Semiconductor Capacitors by Voltage Annealing

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Enhancement of the Stability of Capacitance—Voltage Characteristics of Hg_(1-x)Zn_xTe—Based Metal-Insulator-Semiconductor Capacitors by Voltage Annealing

机译：通过电压退火提高基于Hg_（1-x）Zn_xTe的金属-绝缘体-半导体电容器的电容稳定性-电压特性

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摘要

By electrochemical deposition, an anodic oxide film composed of a compound containing HgTeO_3, ZnTeO_3, and TeO_2-rich components was formed on a Hg_(1-x)Zn_xTe material surface. After the anodic oxide film deposition, a voltage annealing process in which the electrical potential is maintained constant was applied. This process improves the quality of the anodic oxide film. The capacitance-voltage (C-V) measurement of the metal-insulator-semiconductor (MIS) capacitor of Ni/In/ ZnS/oxide/Hg_(1-x)Zn_xTe confirms the enhancement of the stability of MIS capacitor characteristics by the voltage annealing process.

机译：通过电化学沉积，在Hg_（1-x）Zn_xTe材料表面上形成由包含HgTeO_3，ZnTeO_3和富含TeO_2的成分的化合物组成的阳极氧化膜。在阳极氧化膜沉积之后，施加其中电压保持恒定的电压退火工艺。该过程提高了阳极氧化膜的质量。 Ni / In / ZnS /氧化物/ Hg_（1-x）Zn_xTe的金属-绝缘体-半导体（MIS）电容器的电容-电压（CV）测量证实了电压退火工艺增强了MIS电容器特性的稳定性。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2004年第10a期|p.L1244-L1246|共3页
作者
Young-Hun Kim; Sung-Hoon Kim;
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作者单位

Information and Electronics Research Institute, KAIST, Daejeon 305-701, Korea;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
voltage annealing; Hg_(1-x)Zn_xTe; metal-insulator-semiconductor; anodic oxide film; capacitance-voltage;

机译：电压退火;Hg_（1-x）Zn_xTe;金属绝缘体半导体;阳极氧化膜;电容电压;

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Enhancement of the Stability of Capacitance—Voltage Characteristics of Hg_(1-x)Zn_xTe—Based Metal-Insulator-Semiconductor Capacitors by Voltage Annealing

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